SCOPUS 정보 검색 플랫폼

Semiconductor Science and Technology

Volumn 16, Issue 5, 2001, Pages

Structural and vibrational properties of carbon impurities in crystalline silicon

(6) Zhu, Xiao Yan a,d Lee, Seung Mi a,e Kim, Jae Yon a Lee, Young Hee a,f Chung, Dong Chul b Frauenheim, Thomas c

a Chonbuk National University (South Korea)

b Woosuk University (South Korea)

c UNIVERSITY OF PADERBORN (Germany)

d SOOCHOW UNIVERSITY (China)

e FRITZ HABER INSTITUT DER MAX PLANCK GESELLSCHAFT (Germany)

f Sungkyunkwan University (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMS; CALCULATIONS; CARBON; CRYSTAL IMPURITIES; CRYSTAL LATTICES; CRYSTALLINE MATERIALS; RELAXATION PROCESSES; SILICON ALLOYS; STRUCTURE (COMPOSITION); VIBRATIONS (MECHANICAL);

CARBON IMPURITY; CRYSTALLINE SILICON; TIGHT BINDING CALCULATION; VIBRATIONAL FREQUENCY; VIBRATIONAL PROPERTY;

SEMICONDUCTING SILICON;

EID: 0035326808 PISSN: 02681242 EISSN: None Source Type: Journal
DOI: 10.1088/0268-1242/16/5/201 Document Type: Review

Times cited : (8)

References (31)

1
- 0032068321
- (1998) Thin Solid Films , vol.321 , pp. 11
- Osten, H.J.¹ Barth, R.² Fischer, G.³ Heinemann, B.⁴ Knoll, D.⁵ Lippert, G.⁶ Rücher, H.⁷ Schley, P.⁸ Röpke, W.⁹

2
- 0343511339
- (1992) Appl. Phys. Lett. , vol.60 , pp. 3033
- Eberl, K.¹ Iyer, S.S.² Zollner, S.³ Tsang, J.C.⁴ LeGoues, F.K.⁵

3
- 36449001524
- (1992) Appl. Phys. Lett. , vol.61 , pp. 961
- Tsang, J.C.¹ Eberl, K.² Zollner, S.³ Iyer, S.S.⁴

4
- 0022144630
- (1985) Japan. J. Appl. Phys. , vol.10
- Forman, R.¹ Bell, M.I.² Myers, D.R.³ Chandler-Horowitz, D.⁴

5
- 16444376728
- (1994) J. Appl. Phys. , vol.76 , pp. 3656
- Strane, J.W.¹ Stein, H.J.² Lee, S.R.³ Picraux, S.T.⁴ Watanabe, J.K.⁵ Mayer, J.W.⁶

6
- 0037976494
- (1996) Phys. Rev. B , vol.53 , pp. 1302
- Rücker, H.¹ Methfessel, M.² Dietrich, B.³ Pressel, K.⁴ Osten, H.J.⁵

7
- 0031071169
- (1997) Thin Solid Films , vol.294 , pp. 129
- Guedj, C.¹ Portier, X.² Hairie, A.³ Bouchier, D.⁴ Calvarin, G.⁵ Piriou, B.⁶

8
- 0031274480
- (1997) J. Appl. Phys. , vol.82 , pp. 4246
- Melendez-Lira, M.¹ Melendez, J.² Kramer, K.M.³ Thompson, M.O.⁴ Cave, N.⁵ Liu, R.⁶ Christiansen, J.W.⁷ Theodore, N.D.⁸ Candelaria, J.J.⁹

9
- 0000049492
- (1998) Appl. Phys. Lett. , vol.72 , pp. 2117
- Chandrasekhar, D.¹ McMurran, J.² Smith, D.J.³ Kouvetakis, J.⁴ Lorentzen, J.D.⁵ Menéndez, J.⁶

10
- 0001748371
- (1971) J. Phys. Chem. Solids , vol.33 , pp. 255
- Bean, A.R.¹ Newman, R.C.²

11
- 0001552493
- (1996) J. Appl. Phys. , vol.80 , pp. 6711
- Osten, H.I.¹ Kim, M.² Pressel, K.³ Zaumseil, P.⁴

12
- 0029633738
- (1995) J. Cryst. Growth , vol.157 , pp. 414
- Warren, P.¹ Mi, J.² Overney, F.³ Dutoit, M.⁴

13
- 0000681432
- (1998) Appl. Phys. Lett. , vol.72 , pp. 833
- Dashiell, M.W.¹ Kulik, L.V.² Hits, D.³ Kolodzey, J.⁴

14
- 1542779956
- (1998) Phys. Rev. B , vol.58 , pp. 7260
- Elstner, M.¹ Porezag, D.² Jungnickel, G.³ Elsner, J.⁴ Haugk, M.⁵ Frauenheim, Th.⁶ Suhai, S.⁷ Seifert, G.⁸

15
- 0001368589
- (1989) Phys. Rev. B , vol.39 , pp. 8586
- Wang, C.Z.¹ Chan, C.T.² Ho, K.M.³

16
- 0003554309
- (Berlin: Springer)
- (1991) Semiconductor Group IV Elements and III-V Compounds

17
- 0001632195
- (1971) J. Phys. Chem. Solids , vol.32 , pp. 653
- Yean, D.H.¹ Riter, J.R.²

18
- 0000127559
- (1997) J. Phys. Chem. Solids , vol.32 , pp. 1211
- Bean, A.R.¹

19
- 0001194263
- (1986) Phys. Rev. Lett. , vol.56 , pp. 2195
- Dannefaer, S.¹

20
- 0002552221
- (1994) Phys. Rev. B , vol.49 , pp. 1743
- Kim, E.¹ Lee, Y.H.²

21
- 0001292495
- (1995) Phys. Rev. B , vol.51 , pp. 5429
- Kim, E.¹ Lee, Y.H.²

22
- 4243941082
- (1990) Phys. Rev. Lett. , vol.64 , pp. 1757
- Tersoff, J.¹

23
- 0000361668
- (1994) Phys. Rev. B , vol.50 , pp. 7439
- Capaz, R.B.¹ Dal A.P., Jr.² Joannopoulos, J.D.³

24
- 0000105170
- (1997) Phys. Rev. B , vol.55 , pp. 2188
- Leary, P.¹ Jones, R.² Oberg, S.³ Torres, V.J.B.⁴

25
- 0001548527
- (1998) Phys. Rev. B , vol.58 , pp. 9845
- Capaz, R.B.¹ Dal A.P., Jr.² Joannopoulos, J.D.³

26
- 0001548018
- ed S Mahajan (New York: Elsevier)
- (1994) Handbook on Semiconductors , vol.3 , pp. 1557
- Davies, G.¹ Newman, R.C.²

27
- 0000238980
- (1990) Phys. Rev. B , vol.42 , pp. 5765
- Song, L.W.¹ Zhan, X.D.² Benson, B.W.³ Watkins, G.D.⁴

28
- 0004005306
- (New York: Wiley); and references therein
- (1981) Physics of Semiconductor Devices , pp. 21
- Sze, S.M.¹

29
- 0001296666
- (1998) J. Appl. Phys. , vol.84 , pp. 4631
- Guedj, C.¹ Dashiell, M.W.² Kulik, L.³ Kolodzey, J.⁴ Hairie, A.⁵

30
- 0031552819
- (1997) Appl. Phys. Lett. , vol.71 , pp. 653
- Joelsson, K.B.¹ Ni, W.-X.² Ponzina, G.³ Radamson, H.H.⁴ Hansson, G.V.⁵

31
- 4444324763
- (1995) Phys. Rev. Lett. , vol.74 , pp. 5080
- Tersoff, J.¹

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