Simulation of Oxygen Contaminated Silicon Grain Boundaries in Cluster Approximation

Solid State Phenomena

Volumn 95-96, Issue , 2004, Pages 65-70

  Pushkarchuk, A L ^a   Fedotov, A K ^b   Kuten, S A ^a  

^a INSTITUTE FOR NUCLEAR PROBLEMS   (Belarus)

^b BELARUSIAN STATE UNIVERSITY   (Belarus)

Author keywords

Gettering; Grain Boundaries; Oxygen; Silicon

Indexed keywords

APPROXIMATION THEORY; BAND STRUCTURE; CHEMICAL BONDS; COMPUTER SIMULATION; CRYSTAL LATTICES; DATA REDUCTION; DIFFERENTIAL EQUATIONS; ELECTRONIC STRUCTURE; GEOMETRICAL OPTICS; GRAIN BOUNDARIES; GROWTH (MATERIALS); MATHEMATICAL TRANSFORMATIONS; MOLECULAR DYNAMICS; POLYCRYSTALS; PROBABILITY DENSITY FUNCTION; SOLAR CELLS;

ATOMIC ORBITALS; ELECTRONIC DEVICES; THERMAL DONORS;

POLYSILICON;

EID: 1642434337     PISSN: 10120394     EISSN: None     Source Type: Book Series    
DOI: None     Document Type: Conference Paper

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