BVCEO-BVCBO separation and sharpness of breakdown in high-speed bipolar transistors

IEEE Electron Device Letters

Volumn 26, Issue 7, 2005, Pages 479-482

  Bolognesi, Colombo R ^a  

^a SIMON FRASER UNIVERSITY   (Canada)

Author keywords

Bipolar transistors; GaAs; Heterojunction bipolar transistors; Impact ionization; InP; Semiconductor device break down; Si

Indexed keywords

CHARGE CARRIERS; ELECTRIC BREAKDOWN OF SOLIDS; IMPACT IONIZATION; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DOPING; THERMODYNAMIC PROPERTIES;

HIGH-SPEED BIPOLAR TRANSISTORS; OPEN-BASE COLLECTOR EMITTER BREAKDOWN VOLTAGES; OPEN-EMITTER BASE COLLECTOR BREAKDOWN VOLTAGES; SEMICONDUCTOR DEVICE BREAKDOWN;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 22944457518     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2005.851092     Document Type: Article

References (16)

1. CEO > 6 V," IEEE Electron Device Lett., vol. 22, no. 8, pp. 361-363, Aug. 2001.
2. MAX = 375 GHz /210 GHz," in Proc. Indium Phos. Rel. Materials, Santa Barbara, CA, 2003, pp. 374-377.
3. M. Rickelt, H.-M. Rein, and E. Rose, "Influence of impact-ionization-induced instabilities on the maximum usable output voltage of Si-bipolar transistors," IEEE Trans. Electron Devices, vol. 48, no. 4, pp. 774-783, Apr. 2001.
4. S. L. Miller, "Avalanche breakdown in germanium," Phys. Rev., vol 99, pp. 1234-1241, 1955.
5. J. J. Chen, G. B. Guo, J. I. Chyi, and H. Morkoç, "Breakdown behavior of GaAs/AlGaAs HBT's," IEEE Trans. Electron Devices, vol. 36, no. 10, pp. 2165-2171, Oct. 1989.
6. E. F. Crabbé, J. M. C. Stork, G. Baccarani, M. V. Fischetti, and S. E. Laux, "The impact of nonequilibrium transport on breakdown and transit-time in bipolar transistors," in IEDM Tech. Dig., 1990, pp. 463-466.
7. J. Böck, H. Schäfer, H. Knapp, D. Zöschg, K. Aufinger, M. Wurzer, S. Boguth, R. Stengl, R. Schreiter, and T. F. Meister, "High-speed SiGe:C bipolar technology," in IEDM Tech. Dig., 2001, pp. 344-347.
8. C. R. Bolognesi, S. P. Watkins, and N. Moll, "Breakdown voltage limitations, impact ionization, and interband tunneling in InP/GaAsSb/ InP type-II NPN DHBTs," in IEDM Tech. Dig., 2003, pp. 715-718.
9. M. H. Woods, W. C. Johnson, and M. A. Lampert, "Use of a Schottky barrier to measure impact ionization coefficients in semiconductors," Solid State Electron., vol. 16, no. 3, pp. 381-394, 1973.
10. M. A. Saleh, M. M. Hayat, P. P. Sotirelis, A. L. Holmes, J. C. Campbell, B. E. A. Saleh, and M. C. Teich, "Impact-ionization and noise characteristics oh thin III-V avalanche photodiodes," IEEE Trans. Electron Devices, vol. 48, no. 12, pp. 2722-2731, Dec. 2001.
11. G. E. Bulman, V. M. Robbins, and G. E. Stillman, "The determination of impact ionization coefficients in (100) gallium arsenide using avalanche noise and photocurrent multiplication measurements," IEEE Trans. Electron Devices, vol. ED-32, no. 11, pp. 2454-2466, Nov. 1986.
12. J. D. Cressler, J. Warnock, D. L. Harame, J. N. Burghartz, K. A. Jenkins, and C. T. Chuang, "A high-speed complementary silicon bipolar technology with 12- f J power-delay product," IEEE Electron Device Lett., vol. 14, no. 11, pp. 523-526, Nov. 1993.
13. T. Onai, E. Ohue, Y. Idei, M. Tanabe, H. Shimamoto, K. Washio, and T. Nakamura, "Self-aligned complementary bipolar technology for low-power dissipation and ultra-high-speed LSIs," IEEE Trans. Electron Devices, vol. 42, no. 3, pp. 413-418, Mar. 1995.
14. R. Van Overstraeten and H. De Man, "Measurements of the ionization rates in diffused silicon p-n junctions," Solid State Electron., vol. 13, no. 5, pp. 583-608, 1970.
15. M. Reisch, "Carrier multiplication and avalanche breakdown in self-aligned bipolar transistors," Solid State Electron., vol. 33, no. 2, pp. 189-197, 1990.
16. E. Zanoni, E. F. Crabbé, J. M. Stork, P. Pavan, G. Verzellesi, L. Vendrame, and C. Canali, "Measurements and simulation of avalanche breakdown in advanced Si bipolar transistors," in IEDM Tech. Dig., 1992, pp. 927-930.