Stable p-channel polysilicon thin film transistors fabricated by laser doping technique

Thin Solid Films

Volumn 487, Issue 1-2, 2005, Pages 232-236

  Di Gaspare, A ^a   Mariucci, L ^a   Pecora, A ^a   Fortunato, G ^a  

^a CNR   (Italy)

Author keywords

Laser doping; Polycrystalline silicon; Reliability; Thin Film Transistors

Indexed keywords

ELECTRIC FIELDS; ELECTRON CYCLOTRON RESONANCE; LASER APPLICATIONS; LOW TEMPERATURE PHENOMENA; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; POLYSILICON; RELIABILITY; SEMICONDUCTOR DOPING; THRESHOLD VOLTAGE;

CHARGE INJECTION; DRAIN VOLTAGE; GATE VOLTAGE; LASER DOPING;

THIN FILM TRANSISTORS;

EID: 22944453325     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2005.01.071     Document Type: Conference Paper

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