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Volumn 20, Issue 1, 1999, Pages 12-14
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Stability of short-channel p-channel polysilicon thin-film transistors with ECR N2O-plasma gate oxide
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Author keywords
Ecr n2o plasma oxidation; Hot carrier effects; Poly si tft; Short channel; Stability
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Indexed keywords
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EID: 0002592679
PISSN: 07413106
EISSN: None
Source Type: Journal
DOI: 10.1109/55.737558 Document Type: Article |
Times cited : (10)
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References (2)
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