Effect of in-line electron beam treatment on the electrical performance of Cu/organic low-κ damascene interconnects

IEEE Electron Device Letters

Volumn 26, Issue 7, 2005, Pages 448-450

  Chen, Zhe ^a   Prasad, K ^a   Gan, Z H ^b   Wu, S Y ^a   Mehta, S S ^c   Jiang, N ^c   Mhaisalkar, S G ^b   Kumar, Rakesh ^c   Li, C Y ^c,d  

^a NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

^b NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

^c INSTITUTE OF MICROELECTRONICS   (Singapore)

^d CHARTERED SEMICONDUCTOR MANUFACTURING LTD   (Singapore)

Author keywords

Cu damascene interconnects; In line electron beam (E beam) treatment; Organic low

Indexed keywords

DIELECTRIC MATERIALS; ELECTRIC BREAKDOWN; ELECTRON BEAMS; HEAT TREATMENT; INTERFACES (MATERIALS); LEAKAGE CURRENTS; PERMITTIVITY; RAPID THERMAL ANNEALING; X RAY PHOTOELECTRON SPECTROSCOPY;

DAMASCENE INTERCONNECTS; IN-LINE ELECTRON BEAM TREATMENT;

SEMICONDUCTOR DEVICE STRUCTURES;

EID: 22944439059     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2005.851185     Document Type: Article

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