Diamond field-emission triode with low gate turn-on voltage and high gain

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 21, Issue 1 SPEC., 2003, Pages 614-617

  Wisitsora at, A ^a   Kang, W P ^a   Davidson, J L ^a   Kerns, D V ^a   Fisher, T ^a  

^a VANDERBILT UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CATHODES; DIAMOND FILMS; ELECTRIC POTENTIAL; ELECTRIC PROPERTIES; ELECTRON EMISSION; MICROELECTRONICS; MOSFET DEVICES; SILICA; SILICON ON INSULATOR TECHNOLOGY; SILICON WAFERS; SOLID STATE DEVICES; VACUUM APPLICATIONS;

DIAMOND FIELD-EMISSION DIODE; HIGH GAIN FACTOR; LOW GATE TURN-ON VOLTAGE; SELF-ALIGNING GATE TECHNIQUE;

TRIODES;

EID: 0037207780     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1516186     Document Type: Article

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