Low turn-on voltage field emission triodes with selective growth of carbon nanotubes

IEEE Electron Device Letters

Volumn 22, Issue 11, 2001, Pages 516-518

  Chen, K J ^a   Hong, W K ^a   Lin, C P ^a   Chen, K H ^b   Chen, L C ^c   Cheng, H C ^a  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^b INSTITUTE OF ATOMIC AND MOLECULAR SCIENCES   (Taiwan)

^c NATIONAL TAIWAN UNIVERSITY   (Taiwan)

Author keywords

Carbon nanotubes; Field emission display; Field emission triode

Indexed keywords

CARBON NANOTUBES; ELECTRIC CURRENTS; ELECTRIC POTENTIAL; FIELD EMISSION DISPLAYS; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SEMICONDUCTOR DEVICE MANUFACTURE;

FIELD EMISSION TRIODES; GATE VOLTAGE; MICROWAVE PLASMA CHEMICAL VAPOR DEPOSITION; VACUUM MICROELECTRONICS;

TRIODES;

EID: 0035505659     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/55.962648     Document Type: Article

References (7)

1. A simple and robust electron beam source from carbon nanotubes
2. Field emission from nanotube bundle emitters at low fields
3. Field emission from single-wall carbon nanotube films
4. High current density field emission from arrays of carbon nanotubes and diamond-clad Si tips
5. Ultralow biased field emitter using single-wall carbon nanotube directly grown onto silicon tip by thermal chemical vapor deposition
6. The carbon-nanotubes based field-emission displays for future large and full color displays
7. Flat panel display prototype using gated carbon nanotube field emitters