Silane consumption and conversion analysis in amorphous silicon and silicon nitride plasma deposition using in situ mass spectroscopy

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Volumn 16, Issue 3, 1998, Pages 1852-1856

  Chowdhury, Ashfaqul I ^a   Klein, Tonya M ^a   Anderson, Timothy M ^a   Parsons, Gregory N ^a  

^a North Carolina State University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AMINOSILANES; DISILANES; GAS DILUTION; GAS-PHASE NITROGEN; GAS-PHASE REACTANTS; IN-SITU; LOW POWER; MASS SPECTROSCOPY; NITRIDE DEPOSITION; PROCESS DEPENDENCE; QUADRUPOLE MASS SPECTROMETER; REACTION ANALYSIS; REACTOR GEOMETRIES; RESIDENCE TIME; SILICON DEPOSITION; SILICON NITRIDE DEPOSITION;

CHEMICAL VAPOR DEPOSITION; DEPOSITION; GASES; MASS SPECTROMETERS; MASS SPECTROMETRY; PLASMA DEPOSITION; SILICON NITRIDE;

AMORPHOUS SILICON;

EID: 0342396549     PISSN: 07342101     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.581117     Document Type: Article

References (17)

1. 1994 National Technology Roadmap for Semiconductors, section on Materials and Bulk Processes, and 1994 Metrology Supplement to the National Technology Roadmap for Semiconductors, section on Sensors and Methodology for In Situ Process control,
2. J. Perrin, in Plasma Deposition of Amorphous Silicon. Based Materials, edited by G. Bruno, P. Capezzuto, and A. Madan (Academic, San Diego, CA. 1995), p. 177.
3. T. E. Benson, L. I. Kainlet, S. M. Ruegsegger, C. K. Hanish, P. D. Hanish, B. A. Rashap, P. Klimecky, J. S. Freudenberg, J. W. Grizzle, P. P. Khargonekar, and F. L. Terry, J. Vac. Sci. Technol. B 14, 483 (1996).
4. T. J. Knight, D. W. Greve, X. Cheng, and B. Krogh, IEEE Trans. Semicond. Manuf. 10, 137 (1997).
5. A. D. Bailey III and R. A. Gottscho, Jpn. J. Appl. Phys., Part 1 34, 2172 (1995).
6. I. Tepermeister, W. T. Conner, T. Ahmed, H. Barnard, K. Gehlert, and D. Scipione, Solid State Technol. 39, 63 (1996).
7. K.-T. Sung and S. Pang, Jpn, J. Appl. Phys., Part 1 33, 7112 (1994).
8. S. Bushman, T. F. Edgar, and I. Tractenberg, J. Electrochem. Soc. 144, 721 (1997).
9. J. Chambers, K. Min, and G. N. Parsons (unpublished).
10. L. L. Tedder, G. W. Rubloff, I. Shareef, M. Anderle, D.-H. Kim, and G. N. Parsons, J. Vac. Sci. Technol, B 13, 1924 (1995).
11. L. L. Tedder, G. W. Rubloff, B. F. Cohaghan, and G. N. Parsons, J. Vac. Sci. Technol. A 14, 267 (1996).
12. A. I. Chowdhury, W. W. Read, G. W. Rubloff, L. L. Tedder, and G. N. Parsons, J. Vac. Sci. Technol, B 15, 127 (1997).
13. E. Srinivasan, J. S. Bordeaux, H. H. Lamb, and G. N. Parsons, J. Chem. Phys. (to be published).
14. D. L. Smith, A. S. Alimonda, and F. J. von Preissig, J. Vac. Sci. Technol. B 8, 551 (1990).
15. D. L. Smith, J. Vac. Sci. Technol, A 11, 1843 (1993).
16. T. M. Klein, T. M. Anderson, A. I. Chowdhury, and G. N. Parsons, J. Vac. Sci. Technol. (to be published).
17. G. Oversluizen, W. H. M. Lodders, and I. D. French, Thin Solid Films 241, 287 (1994).