Silane consumption and conversion analysis in amorphous silicon and silicon nitride plasma deposition using in situ mass spectroscopy

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Volumn 16, Issue 3, 1998, Pages 1852-1856

  Chowdhury, Ashfaqul I ^a   Klein, Tonya M ^a   Anderson, Timothy M ^a   Parsons, Gregory N ^a  

^a Campus Box 7908   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AMINOSILANES; DISILANES; GAS DILUTION; GAS-PHASE NITROGEN; GAS-PHASE REACTANTS; IN-SITU; LOW POWER; MASS SPECTROSCOPY; NITRIDE DEPOSITION; PROCESS DEPENDENCE; QUADRUPOLE MASS SPECTROMETER; REACTION ANALYSIS; REACTOR GEOMETRIES; RESIDENCE TIME; SILICON DEPOSITION; SILICON NITRIDE DEPOSITION;

CHEMICAL VAPOR DEPOSITION; DEPOSITION; GASES; MASS SPECTROMETERS; MASS SPECTROMETRY; PLASMA DEPOSITION; SILICON NITRIDE;

AMORPHOUS SILICON;

EID: 0342396549     PISSN: 07342101     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.581117     Document Type: Article

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