Photolithographic structuring with evaporated inorganic photoresist

Journal of Optoelectronics and Advanced Materials

Volumn 7, Issue 3, 2005, Pages 1415-1419

  Mednikarov, B ^a   Sahatchieva, M ^a  

^a CENTRAL LABORATORY OF PHOTOPROCESSES   (Bulgaria)

Author keywords

AlN; As2S 3; Glass; Inorganic photoresist; Microstructures; Photolithography

Indexed keywords

ALUMINUM NITRIDE; ARSENIC COMPOUNDS; GLASS; III-V SEMICONDUCTORS; MICROSTRUCTURE; PHOTOLITHOGRAPHY; PHOTORESISTS; SUBSTRATES; WIDE BAND GAP SEMICONDUCTORS;

ALN LAYERS; AS2S3; CHALCOGENIDE SEMICONDUCTORS; DIFFERENT SUBSTRATES; GLASS SUBSTRATES; INORGANIC PHOTORESISTS; MATERIAL-BASED; PHOTOPROCESSES;

NITROGEN COMPOUNDS;

EID: 22544482062     PISSN: 14544164     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Conference Paper

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