Chemical etching of ion beam deposited AlN and AlN:H

Thin Solid Films

Volumn 279, Issue 1-2, 1996, Pages 43-48

  Huang, L ^a   Wang, Xiao Dong ^a   Hipps, K W ^a   Mazur, Ursula ^a   Heffron, R ^a   Dickinson, J T ^a  

^a Washington State University   (United States)

Author keywords

Aluminium nitride; Etching; Fourier transform infrared spectroscopy; Nitrides

Indexed keywords

ALUMINUM COMPOUNDS; ATOMIC FORCE MICROSCOPY; CHARACTERIZATION; CHEMICAL REACTIONS; CRYSTAL DEFECTS; ETCHING; FOURIER TRANSFORM INFRARED SPECTROSCOPY; ION BEAMS; NANOSTRUCTURED MATERIALS; OPTICAL MICROSCOPY; SPUTTER DEPOSITION; STOICHIOMETRY;

ALUMINIUM NITRIDE; DEFECTIVE FILMS; ION BEAM SPUTTER DEPOSITION; MICROCRYSTALLINE FILMS;

THIN FILMS;

EID: 0030164294     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/0040-6090(95)08129-1     Document Type: Article

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