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Volumn 44, Issue 5 A, 2005, Pages 2995-2997

Annealing characteristics of Zn-doped InN Films on sapphire substrates by reactive magnetron sputtering

Author keywords

In2O3; Reactive magnetron sputtering; Zn doped InN

Indexed keywords

ABSORPTION; ANNEALING; CARRIER CONCENTRATION; CARRIER MOBILITY; CRYSTALLIZATION; DOPING (ADDITIVES); MAGNETRON SPUTTERING; PHOTOLUMINESCENCE; SAPPHIRE; SEMICONDUCTING INDIUM COMPOUNDS; VACUUM APPLICATIONS; X RAY DIFFRACTION; ZINC;

EID: 22544478132     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/JJAP.44.2995     Document Type: Article
Times cited : (6)

References (16)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.