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Volumn 44, Issue 5 A, 2005, Pages 2995-2997
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Annealing characteristics of Zn-doped InN Films on sapphire substrates by reactive magnetron sputtering
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Author keywords
In2O3; Reactive magnetron sputtering; Zn doped InN
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Indexed keywords
ABSORPTION;
ANNEALING;
CARRIER CONCENTRATION;
CARRIER MOBILITY;
CRYSTALLIZATION;
DOPING (ADDITIVES);
MAGNETRON SPUTTERING;
PHOTOLUMINESCENCE;
SAPPHIRE;
SEMICONDUCTING INDIUM COMPOUNDS;
VACUUM APPLICATIONS;
X RAY DIFFRACTION;
ZINC;
HALL MOBILITY;
IN2O3;
REACTIVE MAGNETRON SPUTTERING;
ZN-DOPED INN;
SEMICONDUCTING FILMS;
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EID: 22544478132
PISSN: 00214922
EISSN: None
Source Type: Journal
DOI: 10.1143/JJAP.44.2995 Document Type: Article |
Times cited : (6)
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References (16)
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