Efficiency of body biasing in 90-nm CMOS for low-power digital circuits

IEEE Journal of Solid-State Circuits

Volumn 40, Issue 7, 2005, Pages 1549-1555

  Von Arnim, Klaus ^a,b   Borinski, Eduardo ^a   Seegebrecht, Peter ^b   Fiedler, Horst ^c   Brederlow, Ralf ^a   Thewes, Roland ^a   Berthold, Jörg ^a   Pacha, Christian ^a  

^a INFINEON TECHNOLOGIES AG   (Germany)

^b UNIVERSITY OF KIEL   (Germany)

^c TU DORTMUND UNIVERSITY   (Germany)

Author keywords

Body biasing; CMOS digital integrated circuits; Zero temperature coefficient point

Indexed keywords

BANDWIDTH; DIODES; ELECTRIC POTENTIAL; FUNCTIONS; MICROPROCESSOR CHIPS; OVERCURRENT PROTECTION; SHORT CIRCUIT CURRENTS; SWITCHING;

BODY BIASING; BODY-BIASING; CMOS DIGITAL INTEGRATED CIRCUITS; ZERO-TEMPERATURE COEFFICIENTS POINT;

CMOS INTEGRATED CIRCUITS;

EID: 22544440903     PISSN: 00189200     EISSN: None     Source Type: Journal    
DOI: 10.1109/JSSC.2005.847517     Document Type: Conference Paper

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