Modelling of plasma etching process using radial basis function network and genetic algorithm

Vacuum

Volumn 79, Issue 3-4, 2005, Pages 140-147

  Han, Dongil ^a   Moon, Seung Bin ^a   Park, Kyungyoung ^a   Kim, Byungwhan ^a   Lee, Kyeong Kyun ^b   Kim, Nam Jeung ^c  

^a Sejong University   (South Korea)

^b Korea Institute of Industrial Technology   (South Korea)

^c Ministry of Commerce   (South Korea)

Author keywords

Genetic algorithm; Plasma etching; Radial basis function network; Statistical regression model

Indexed keywords

COMPUTER SIMULATION; DEPOSITION; GENETIC ALGORITHMS; INDUCTIVELY COUPLED PLASMA; RADIAL BASIS FUNCTION NETWORKS; REGRESSION ANALYSIS; SILICA; SURFACE ROUGHNESS;

ETCH RATE; PLASMA CONTROL; RADIO FREQUENCIES (RF); STATISTICAL REGRESSION MODELS;

PLASMA ETCHING;

EID: 22544433202     PISSN: 0042207X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.vacuum.2005.03.001     Document Type: Article

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