Modeling oxide etching in a magnetically enhanced reactive ion plasma using neural networks

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 20, Issue 5, 2002, Pages 2113-2119

  Kim, Byungwhan ^a   Kwon, Kwang Ho ^b   Kwon, Sung Ku ^c   Park, Jong Moon ^c   Yoo, Seong Wook ^c   Park, Kun Sik ^c   Kim, Bo Woo ^c  

^a Sejong University   (South Korea)

^b Hanseo University   (South Korea)

^c Electronics and Telecommunications Research Institute (ETRI)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; DEPOSITION; EMISSION SPECTROSCOPY; ERRORS; FLUORINE; NEURAL NETWORKS; ORGANIC COMPOUNDS; OXIDES; POLYMERS; REACTIVE ION ETCHING; STATISTICAL METHODS;

CARBON TETRAFLUORIDE; ETCH PROFILE; ETCH RATE; MAGNETICALLY ENHANCED REACTIVE ION ETCHER; OPTICAL EMISSION SPECTROSCOPY; OXIDE FILMS; POLYMER DEPOSITION EFFECT; RADIO FREQUENCY POWER;

PLASMA ETCHING;

EID: 0036026392     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1511212     Document Type: Article

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