Using cost-effective dilute-acid chemicals to perform postetch interconnect cleans

MICRO

Volumn 23, Issue 5, 2005, Pages 67-76

  Sohn, Hong Seong ^a   Butterbaugh, Jeffery W ^b   Olson, Erik D ^b   Diedrick, John ^b   Lee, Nam Pyo ^b  

^a SAMSUNG Electronics   (South Korea)

^b FSI International   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BACK-SPUTTERING; DILUTE ACIDS; INTERCONNECT CLEANS; TETRAETHOXYSILANE (TEOS);

ALUMINUM; ANISOTROPY; CORROSION; COST EFFECTIVENESS; HYDROGEN PEROXIDE; MICROPROCESSOR CHIPS; PHOTORESISTORS; PLASMA ETCHING; SILICON NITRIDE; SPUTTERING; SULFURIC ACID;

INTERCONNECTION NETWORKS;

EID: 22344439008     PISSN: 10810595     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Review

References (22)

1. The International Technology Roadmap for Semiconductors, Interconnect chapter (San Jose: Semiconductor Industry Association, 2004); available from Internet: http://public.itrs.net.
2. BK Bohannon et al., "Post Metal Etch Residue Removal Using Vapor Phase Processing Technology," in Proceedings of the Annual Technical Meeting of Institute of Environmental Sciences (Mount Prospect, IL: IEST, 1993), 275-281.
3. BK Bohannon, BS Poarch, and DJ Syverson, "The Removal of Reactive Ion Etch Residues," in Proceedings of the Contamination Control and Defect Reduction in Semiconductor Manufacturing II Conference (Pennington, NI: The Electrochemical Society, 1994), 26-37.
4. 3 and Its Impact on Step Coverage of Plasma-Deposited Silicon Oxide from Tetraethoxysilane," Journal of Vacuum Science and Technology B 9, no. 5 (1991): 2530-2535.
5. W Kleemeier, V Loen, and SW Graham, "Plasma Etch Residue and Photoresist Removal Utilizing Environmentally Benign Process Chemicals," in Proceedings of the International Symposium on Ultra Clean Processing of Silicon Surfaces (UCPSS 1998) (Zurich-Uetikon, Switzerland: Scitec Publications, 1999), 143-152.
6. S Miyaji, T Kato, and T Yamauchi, "Ashing Residues on TiN Antireflective Coating Layers," Journal of Vacuum Science and Technology A 14, no. 6 (1996): 3082-3086.
7. S Marks et al., "Optimization of Photoresist and Polymer Removal in a Via Etch Process," in Proceedings of the International Symposium on Cleaning Technology in Semiconductor Device Manufacturing (Pennington, NI: The Electrochemical Society, 1995), 214-221.
8. JK Tong et al., "Removal of Polymeric/Silicate Residues and Reduction of Contact Resistance for Inter-Metal Via Holes by Vapor Phase HP Cleaning," in Proceedings of the International Symposium on Cleaning Technology in Semiconductor Device Manufacturing (Pennington, NJ: The Electrochemical Society, 1995), 235-242.
9. 2 Films by Pyrolysis of Tetraethylorthosilicate," Journal of Vacuum Science and Technology B 5, no. 6 (1987): 1555-1563.
10. N Selamoglu et al., "Silicon Oxide Deposition from Tetraethoxysilane in a Radio Frequency Downstream Reactor: Mechanisms and Step Coverage," Journal of Vacuumm Science and Technology B 7, no. 6 (1989): 1345-1351.
11. SJ Kirk and R Small, "The Effect of DI Water and Intermediate Rinse Solutions on Post Metal Etch Residue Removal Using Semi-Aqueous Cleaning Chemistries," in Proceedings of the International Symposium on Ultra Clean Processing of Silicon Surfaces (UCPSS 2000) (Zurich-Uetikon, Switzerland: Scitech Publications, 2002), 307-310.
12. WM Lee, "A New Approach in Photoresist Stripping and Post Plasma Etch/Ash Wafer Cleaning for Submicron Processes," in Proceedings of the Interconnects, Contact, Metallization, and Multilevel Metallization/Reliability of Semiconductor Devices, Interconnects and Thin Insulator Materials Conference (Pennington, NJ: The Electrochemical Society, 1993), 326.
13. SW Graham, "Post Metal Etch Polymer Removal Process," in Proceedings of the International Symposium on Cleaning Technology in Semiconductor Device Manufacturing (Pennington, NJ: The Electrochemical Society, 1997), 587-593.
14. J Diedrick et al., "Improved Post-Etch Via Clean with Fluoride Based Semi-Aqueous Chemistry Using Intermediate Rinse," in Proceedings of the International Symposium on Cleaning Technology in Semiconductor Device Manufacturing (Pennington, NJ: The Electrochemical Society, 2001), 287-294.
15. W Kern and D Poutinen, "Cleaning Solutions Based on Hydrogen Peroxide for Use in Silicon Semiconductor Technology," RCA Review 31 (1970): 187-206.
16. M Meuris et al., "A New Cleaning Concept for Particle and Metal Removal on Si Surfaces," in Proceedings of the International Symposium on Cleaning Technology in Semiconductor Device Manufacturing (Pennington, NJ: The Electrochemical Society, 1994), 15-25.
17. F Tardif et al., "Optimization of HF and Oxidant Wet Cleanings before 7 nm Gate Oxide, Introduction to DDC: Diluted Dynamic Clean," in Proceedings of the International Symposium on Cleaning Technology in Semiconductor Device Manufacturing (Pennington, NJ: The Electrochemical Society, 1995), 49-59.
18. T Sakon et al., Solution for cleaning silicon semiconductors and silicon oxides, U.S. Pat. 5,560,857, 1996.
19. DL Rath et al., "New Aqueous Clean for Aluminum Interconnects: Part I. Fundamentals," in Proceedings of the International Symposium on Ultra Clean Processing of Silicon Surfaces (UCPSS 2000) (Zurich-Uetikon, Switzerland: Scitech Publications, 2002), 31-34.
20. R Ravikumar et al., "New Aqueous Clean for Aluminum Interconnects: Part II. Applications," in Proceedings of the International Symposium on Ultra Clean Processing of Silicon Surfaces (UCPSS 2000) (Zurich-Uetikon, Switzerland: Scitech Publications, 2002), 51-54.
21. L Archer, S-A Henry, and D Nachreiner, "Removing Postash Polymer Residue from BEOL Structures Using Inorganic Chemicals," MICRO 19, no. 6 (2001): 95-103.
22. R Vroom, G Gogg, and J O'Dwyer, "BEOL Post Ash Residue Removal Using DSP* Chemistry in an FSI Batch Spray Tool," in Proceedings of the International Symposium on Ultra Clean Processing of Silicon Surfaces (UCPSS 2002) (Zurich-Uetikon, Switzerland: Scitech Publications, 2003), 117-120.