Nanopores in macroporous silicon

Inorganic Materials

Volumn 40, Issue 11, 2004, Pages 1127-1132

  Bardyshev, N I ^a   Mokrushin, A D ^a   Puryaeva, T P ^a   Serebryakova, N V ^a   Starkov, V V ^b  

^a RUSSIAN ACADEMY OF SCIENCES   (Russian Federation)

^b INSTITUTE OF MICROELECTRONICS TECHNOLOGY AND HIGH PURITY MATERIALS   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 22044455397     PISSN: 00201685     EISSN: 16083172     Source Type: Journal    
DOI: 10.1023/B:INMA.0000048208.41695.b9     Document Type: Article

References (26)

1. Gullis, A.G., Canham, L.T., and Calcott, D.G., The Structural and Luminescence Properties of Porous Silicon, J. Appl. Phys., 1997, vol. 82, no. 3, pp. 909-965.
2. Kanemitsu, Y., Light Emission from Porous Silicon and Related Materials, Phys. Rep., 1995, vol. 263, no. 1, pp. 1-91.
3. Labunov, V., Bondarenko, V., Glinenko, L., et al., Heat Treatment Effect on Porous Silicon, Thin Solid Films, 1986, vol. 137, no. 1, pp. 123-129.
4. Herino, R., Bomchill, G., Barla, K., et al., Porosity and Pore Size Distributions of Porous Silicon Layers, J. Electrochem. Soc., 1987, vol. 134, no. 8, pp. 1994-2000.
5. Vyatkin, A., Starkov, V., Tzeitlin, V., et al., Random and Ordered Macropore Formation in p-Type Silicon, J. Electrochem. Soc., 2002, vol. 149, no. 1, pp. 79-85.
6. Gruning, U. and Lehmann, V., Macroporous Silicon with Complete Two-Dimensional Photonic Band Gap Centered at 5 μm, Appl. Phys. Lett., 1996, vol. 68, no. 6, pp. 747-749.
7. Astrova, E.V., Application of Ion Implantation to Form Regular Pattern of Macropores in Silicon, III Int. Conf. on Porous Semiconductors - Science and Technology, Spain, 2002, P1-36.
8. Aristov, V.V., Starkov, V.V., Shabelnikov, L.G., et al., Short Focus Silicon Parabolic Lenses for Hard X-rays, Opt. Commun., 1999, vol. 161, no. 5, pp. 203-208.
9. Ottow, S., Lehmann, V., and Foil, H., Processing of Three-Dimensional Microstructures Using Macroporous n-Type Silicon, J. Electrochem. Soc., 1996, vol. 143, no. 1, pp. 385-392.
10. Lehmann, V., Stengl, R., Reisinger, H., et al., Optical Short Pass Filters on Macroporous Silicon, Appl. Phys. Lett., 2001, vol. 78, no. 4, pp. 589-591.
11. Beetz, C.P., Boerstler, R., Steinbeck, J., et al., Silicon-Micromachined MicroChannel Plates, Nucl. Instrum. Methods Phys. Res., Sect. A, 2000, vol. 442, no. 2, pp. 443-451.
12. Dolgova, T.V., Maidykovskii, A.I., Martem'yanov, M.G., et al., Giant Third Harmonic in Photonic Crystals and Microcavities Based on Porous Silicon, Pis'ma Zh. Eksp. Tear. Fiz., 2002, vol. 75, no. 1, pp. 17-21.
13. Astrova, E.V., Remenyuk, A.V., Tkachenko, A.G., and Shul'pina, I.L., Nondestructive Testing of MicroChannel (Microporous) Silicon by X-ray Topography, Pis 'ma Zh. Tekh. Fiz., 2000, vol. 26, no. 24, pp. 31-38.
14. Astrova, E.V., Ratnikov, V.V., Remenyuk, A.D., et al., Microstructure of MicroChannel Silicon Studied by X-ray Diffraction, Pis'ma Zh. Tekh. Fiz., 2001, vol. 27, no. 2, pp. 1-8.
15. Astrova, E.V., Ratnikov, V.V., Remenyuk, A.D., and Shul'pina, I.L., Oxidation-Induced Lattice Strains and Defects in Macroporous Silicon, Fiz. Tekh. Poluprovodn. (S.-Peterburg), 2002, vol. 36, no. 9, pp. 1111-1121.
16. Osaka, T., Ogasawara, K., and Nakahara, S., Classification of the Pore Structure of n-Type Silicon and Its Microstructure, J. Electrochem. Soc., 1997, vol. 144, no. 9, pp. 3226-3234.
17. Gol'danskii, V.I., Fizicheskaya khimiya pozitrona i pozitroniya (Physical Chemistry of the Positron and Positronium), Moscow: Nauka.
18. Shantarovich, V.P., Kevdina, I.E., Novikov, Yu.A., et al., Positron Annihilation Study of Porous Silicon Layers, Fiz. Tverd. Tela (S.-Peterburg), 1996, vol. 38, no. 9, pp. 2686-2692.
19. Dannefaer, S., Kerr, D., and Craigen, D., Positron Annihilation Investigation of Porous Silicon, J. Appl. Phys., 1996, vol. 79, no. 12, pp. 9110-9117.
20. Dannefaer, S., Wiebe, C., and Kerr, D., Positron Annihilation Investigation of Porous Silicon Heat Treated to 1000°C, J. Appl. Phys., 1998, vol. 84, no. 12, pp. 6559-6564.
21. Biasini, M., Ferro, G., Monge, M.A., et al., Study of the Structure of Porous Silicon via Positron Annihilation Experiments, J. Phys.: Condens. Matter, 2000, vol. 12, no. 12, pp. 5961-5970.
22. Mokrushin, A., Bardyshev, I., Serebryakova, N., and Starkov, V., Positron Annihilation and IR Spectroscopy Studies of Porous Silicon, Phys. Status Solidi A, 2003, vol. 197, no. 1, pp. 212-216.
23. Gardelis, S. and Hamilton, B., The Effect of Surface Modification on the Luminescence of Porous Silicon, J. Appl. Phys., 1994, vol. 76, no. 9, pp. 5327-5333.
24. Orlov, A.M. and Skvortsov, A.A., Effects of High-Temperature Carbonizing and Plasma Processing on the Optical Properties of Porous Silicon, Neorg. Mater., 2001, vol. 37, no. 8, pp. 903-909
25. [Inorg. Mater. (Engl. Transl.), vol. 37, no. 8, pp. 761-766].
26. Mokrushin, A.D., Shishkin, A.V., Aizenberg, I.A., and Gol'danskii, V.I., Positron Annihilation and Optical Studies of Radiation-Induced Defects in Quartz Glass, Dokl. Akad. Nauk SSSR, 1989, vol. 308, no. 2, pp. 362-365.