Effects of high-temperature carbonizing and plasma processing on the optical properties of porous silicon

Inorganic Materials

Volumn 37, Issue 8, 2001, Pages 761-766

  Orlov, A M ^a   Skvortsov, A A ^a  

^a ULYANOVSK STATE UNIVERSITY   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

ACETONE; CARBON; HYDROXIDE; OXIDIZING AGENT; OXYGEN; SILICON; SILICON CARBIDE; SILICON DIOXIDE;

ADSORPTION; ARTICLE; DIFFUSION COEFFICIENT; ELECTROCHEMISTRY; HIGH TEMPERATURE; LUMINESCENCE; MORPHOLOGY; POROSITY; QUANTUM CHEMISTRY;

EID: 9344235472     PISSN: 00201685     EISSN: None     Source Type: Journal    
DOI: 10.1023/A:1017925727536     Document Type: Article

References (19)

1. Cullis, A.G., Canham, L.T., and Calcott, P.D.G., The Structural and Luminescence Properties of Porous Silicon, J. Appl. Phys., 1997, vol. 82, no. 3, pp. 909-965.
2. Kanemitsu, Y., Light-Emitting Silicon Nanocrystals, Nippon Kessho Gakkaishi, 1996, vol. 38, no. 2, pp. 144-150.
3. Qin, G.G., Song, H.Z., Zhang, B.R., et al., Experimental Evidence for Luminescence from Silicon Oxide Layers in Oxidized Porous Silicon, Phys. Rev. B: Condens. Matter, 1996, vol. 54, no. 4, pp. 2548-2555.
4. Chang, C.S. and Lue, J.T., Photoluminescence and Raman Studies of Porous Silicon under Various Temperatures and Light Illuminations, Thin Solid Films, 1995, vol. 259, no. 2, pp. 275-280.
5. Zoubir, N., Hadj Vergnat, M., Delatour, T., et al., Natural Oxidation of Annealed Chemically Etched Porous Silicon, Thin Solid Films, 1995, vol. 255, no. 1/2, pp. 228-230.
6. 2 Matrix by Ion Implantation, Nanostruct. Mater., 1995, vol. 5, no. 3, pp. 307-318.
7. Kashkarov, P.K., Konstantinova, E.A., and Timoshenko, V.Yu., Mechanisms Underlying the Effect of Molecular Adsorption on Recombination Processes in Porous Silicon, Fiz. Tekh. Poluprovodn. (S.-Peterburg), 1996, vol. 30, no. 8, pp. 1479-1490.
8. Bykovskii, Yu.A., Karavanskii, V.A., Kotkovskii, G.E., et al., Photoinduced Processes on the Surface of Porous Silicon, Poverkhnost, 1999, no. 9, pp. 23-29.
9. Kopylov, A.A. and Kholodilov, A.N., Infrared Absorption in Porous Silicon Prepared in Ethanol-Containing Electrolytes, Fiz. Tekh. Poluprovodn. (S.-Peterburg), 1997, vol. 31, no. 5, pp. 556-558.
10. Orlov, A.M. and Sindyaev, A.V., Luminescence Instability in Porous Silicon, Zh. Tekh. Fiz., 1999, vol. 69, no. 6, pp. 135-137.
11. Semiconductors, Hannay, N.B., Ed., New York: Reinhold, 1959.
12. Translated under the title Poluprovodniki, Moscow: Inostrannaya Literatura, 1962.
13. Rumak, N.V. and Khat'ko, V.V., Dielektricheskie plenki v tverdotel'noi mikroelektronike (Dielectric Films in Solid-State Microelectronics), Borisenko, V.E., Ed., Minsk: Navuka i Tekhnika, 1990.
14. Zolotarev, V.M., Morozov, V.N., and Smirnova, E.V., Opticheskie postoyannye prirodnykh i tekhnicheskikh sred: Spravochnik (Optical Constants of Natural and Technical Media: A Handbook), Leningrad: Khimiya, 1984.
15. Lebedev, E.A., Polisskii, G., and Petrova-Kokh, V., Drift Mobility of Charge Carriers in Porous Silicon, Fiz. Tekh. Poluprovodn. (S.-Peterburg), 1996, vol. 30, no. 8, pp. 1468-1472.
16. Dyer, J.R., Applications of Absorption Spectroscopy in Organic Chemistry, New York: Pergamon, 1966.
17. Translated under the title Prilozheniya absorbtsionnoi spektroskopii organicheskikh soedinenii, Moscow: Khimiya, 1970.
18. Vavilov, V.S., Kiselev, V.F., and Mukashev, B.N., Defekty v kremnii i na ego poverkhnosti (Bulk and Surface Defects in Silicon), Moscow: Nauka, 1990.
19. Yong, S. and Tatsuro, M., Infrared Absorption Properties of Nanocrystalline Cubic SiC Films, Jpn. J. Appl. Phys., 1998, vol. 37, pp. 5485-5489.