Improving performance of cryogenic power electronics

IEEE Transactions on Applied Superconductivity

Volumn 15, Issue 2 PART II, 2005, Pages 2370-2375

  Haldar, Pradeep ^a   Ye, Hua ^a   Efstathiadis, Harry ^a   Raynolds, James ^a   Hennessy, Mike J ^b   Mueller, Otward M ^b   Mueller, Eduard K ^b  

^a STATE UNIVERSITY OF NEW YORK   (United States)

^b MTECH Laboratories   (United States)

Author keywords

Cryogenic electronics; Cryogenic power electronics; High temperature superconductors; Power conditioning; Power electronics; Power semiconductor switches

Indexed keywords

CRYOGENIC ELECTRONICS; CRYOGENIC POWER ELECTRONICS; POWER CONDITIONING; POWER SEMICONDUCTOR SWITCHES;

CAPACITORS; DIODES; ELECTRIC INDUCTORS; ELECTRIC RESISTANCE; ELECTRIC SWITCHES; ELECTRON SCATTERING; ELECTRONICS PACKAGING; GAIN CONTROL; HIGH TEMPERATURE SUPERCONDUCTORS; MOSFET DEVICES; POWER ELECTRONICS; RELIABILITY; TOPOLOGY;

CRYOGENICS;

EID: 22044441339     PISSN: 10518223     EISSN: None     Source Type: Journal    
DOI: 10.1109/TASC.2005.849668     Document Type: Conference Paper

References (37)

1. R. K. Kirschman, "Low-temperature electronics," IEEE Circuits Dev. Mag., vol. 6, no. 2, pp. 12-24, 1990.
2. M. Dean, D. Foty, N. Saks, S. Raider, and G. Oleszel, "Low temperature microelectronics: opportunities and challenges," in Proc. Symp. Low Temperature Electronic Device Operation, Electrochemical Society, vol. 91, 1991, pp. 25-37.
3. B. Ray, S. S. Gerber, R. L. Patterson, and I. T. Myers, "Power control electronics for cryogenic instrumentation," Avances in Inst. and Control, 50, 1, Int. Soc. for Measurement and Control, pp. 131-139, 1995.
4. R. K. Kirschman, "Cold electronics: an overview," Cryogenics, vol. 25, no. 3, pp. 115-122, Mar. 1985.
5. G. W. Nuedeck, Modular Series on Solid State Devices, Volume III: The Bipolar Junction Transistor, 2nd ed. Reading, MA: Addison-Wesley Pub Co., 1989.
6. R. F. Pierret, Modular Series on Solid State Devices, Volume I: Semiconductor Fundamentals, 2nd ed. Reading, MA: Addison-Wesley Pub Co., 1989.
7. R. J. Baker, H. W. Li, and D. E. Boyce, COMS Circuit Design, Layout and Simulation: Wiley, 1998.
8. P. Ghazavi and D. H. Fat, "A numerical model for MOSFETs from liquid-nitrogen temperature to room temperature," IEEE Trans. Electron. Dev., vol. 42, no. 1, pp. 123-134, 1995.
9. M. A. Newell, R. Stern, D. Hykes, G. Bolotin, T. Gregoire, T. McCarthy, C. Buchanan, and S. Cozy, "Extreme temperature (-170 C to +125 C) electronics for nanorover operation," in IEEE Proc. Aerospace Conf.2007, vol. 5, Big Sky, MT, 2001, pp. 2443-2456.
10. R. J. Mauriello, K. B. Sundaram, and L. C. Chow, "Simulation of Si power MOSFET under cryogenic conditions," Solid-State Electron, vol. 43, no. 4, pp. 771-777, Apr. 1999.
11. O. Mueller, "Cryogenic MOSFET power conversion," in Proc. Workshop on Low Temperature Semiconductor Electronics, 1989, 1989, pp. 94-98.
12. K. Shenai, "Performance potential of low-voltage power MOSFETs in liquid-nitrogen-cooled power systems," IEEE Trans. Electron Dev., vol. 38, no. 4, pp. 934-936, 1991.
13. T. Vogler, A. Schlogl, and D. Schroder, "Modeling and characterizing power semiconductors at low temperatures," in Proc. 6th Int. Symp. Power Semiconductor Devices and ICs, ISPSD '94, Davos, Switzerland, 1994. pp. 237-242.
14. R. Singh and B. J. Baliga, "Cryogenic operation of asymmetric n-channel IGBTs," Solid-State Electron., vol. 38, no. 3, pp. 561-566, 1995.
15. M. J. Hennessy, "Electronics for power systems at low temperatures," in Workshop on Extreme Environments Technologies for Space Exploration, Pasadena, CA, 2003.
16. W. Lu, R. J. Mauriello, K. B. Sundaram, and L. C. Chow, "Switching characteristics of a power MOSFET with varying temperature," in Proc. IEEE Southeastcon '98., Orlando, FL, 1998, pp. 268-270.
17. A. Vijh and V. J. Kapoor, "Silicon-germanium power devices at low temperatures for deep-space applications," in Proc. IEEE Lester Eastman Conf. High Performance Devices 2002, 2002, pp. 270-275.
18. M. Shanbhag and T. P. Chow, "Cryogenic operation of 4H-SiC Schottky rectifiers," in Proc. 32nd Electronic Components Conf., San Diego, CA, 2002, pp. 129-132.
19. O. M. Mueller and K. G. Herd, "Ultra-high efficiency power conversion using cryogenic MOSFETs and HT-superconductors," in Proc. 24th Annu.Power Electronics Specialists Con. PESC '93, 1993, pp. 772-778.
20. A. I. Gardiner, S. A. Johnson, and E. Schempp, "Operation of power electronic converters at cryogenic temperatures for utility energy conditioning applications," in Proc. 31st Energy Conversion Engineering Conf. IECEC96, vol. 4, 1996, pp. 2209-2214.
21. R. L. Patterson, A. Hammoud, and J. E. Dickman, "Development of Electronics for Low-Temperature Space Missions," NASA TM-2001-210235, 2001.
22. S.S. Gerber, R. Patterson, B. Ray, and C. Stell, "Performance of a spacecraft DC-DC converter breadboard modified for low temperature operation," in Proc. 31st Intersociety Energy Conversion Engineering Conf. 1996. IECEC 96., vol. 1, Washington, D.C., 1996, pp. 592-598.
23. R. L. Patterson, A. Hammoud, J. E. Dickman, and S. Gerber, "Electronic Components and Circuits for Extreme Temperature Environments,", 2003.
24. M. E. Elbuluk, A. Hammoud, S. S. Gerber, and R. L. Patterson, "Cryogenic Evaluation of an Advanced DC/DC Converter Module for DeepSpace Applications," Technical Memorandum NASA TM-2003-212085, 2003.
25. M. E. Elbuluk, S. S. Gerber, A. Hammoud, R. L. Patterson, and E. Overton, "Performance of High-Speed PWM Control Chips at Cryogenic Temperatures," Technical Memorandum NASA TM-2001-211123, 2001.
26. M. E. Elbuluk, S. S. Gerber, A. Hammoud, and R. L. Patterson, "Performance of Power Converters at Cryogenic Temperatures," Technical Memorandum NASA TM-2001-211130, 2001.
27. M. E. Elbuluk, A. Hammoud, S. S. Gerber, R. L. Patterson, and E. Overton, "Low Temperature Performance of High Power Density DC/DC Converter Modules," Technical Memorandum NASA TM-2001-210973, 2001.
28. M. E. Elbuluk, S. S. Gerber, A. Hammoud, and R. L. Patterson, "Efficiency and Regulation of Commercial Low Power DC/DC Converter Modules at Low Temperatures," Technical Memorandum NASA TM-2000-210251, 2000.
29. R. L. Patterson, M. E. Elbuluk, and E. Overton, "Electronic Components and Systems for Cryogenic Space Applications," Technical Memorandum NASA TM-2001-211129, 2001.
30. R. L. Patterson, A. Hammoud, and S. S. Gerber, "Evaluation of Capacitors at Cryogenic Temperatures for Space Applications," Technical Memorandum NASA TM-1998-206983, 1998.
31. R. L. Patterson, J. E. Dickman, S. S. Gerber, M. E. Elbuluk, and E. Overton, "Electronics for Deep Space Cryogenic Applications," Technical Memorandum NASA TM-2002-211695, 2002.
32. R. L. Patterson, A. Hammoud, J. E. Dickman, S. S. Gerber, E. Overton, and M. E. Elbuluk, "Electrical Devices and Circuits for Low Temperature Space Applications," Technical Memorandum NASA TM-2003-212600, 2003.
33. B. Ray, S. S. Gerber, R. L. Patterson, and I. T. Myers, "Low-temperature operation of a buck DC/DC converter," in Proc. 10th Annu. Applied Power Electronics Conf. Exposition, APEC '95, Dallas, TX, USA, 1995, pp. 941-946.
34. W. D. Jackson, O. S. Mazzoni, and E. Schempp, "Characteristics of semiconductor devices at cryogenic temperatures," in Proc. Intersociety Energy Conversion Engineering Conf., vol. 31st, 1996, pp. 676-681.
35. M. Giesselmann, Z. Mahund, and S. Carson, "Investigation of power MOSFET switching at cryogenic temperatures," in Proc. 22nd Int. Power Modulator Symp., 1996, pp. 47-50.
36. A. E. Schlogl, G. Deboy, H. W. Lorenzen, U. Linnert, H. J. Schulze, and J. P. Stengl, "Properties of CoolMOS between 420 K and 80 K - the ideal device for cryogenic applications," in Proc. 11th Int. Symp. Power Semiconductor Devices and ICs, ISPSD '99, Toronto, ON, Canada, May 26-28, 1999, pp. 91-94.
37. M. E. Levinshtein and T. T. Mnatsakanov, "On the transport equations in popular commercial device simulators," IEEE Trans. Electron Dev., vol. 49, no. 4, pp. 702-703, 2002.