Cryogenic operation of 4H-SiC Schottky rectifiers

IEEE International Symposium on Power Semiconductor Devices and ICs (ISPSD)

Volumn , Issue , 2002, Pages 129-132

  Shanbhag, M ^a   Chow, T P ^a  

^a RENSSELAER POLYTECHNIC INSTITUTE   (United States)

Author keywords

Barrier inhomogeneities; Cryogenic; Fowler Nordheim tunneling; Schottky rectifier; Silicon Carbide

Indexed keywords

CURRENT DENSITY; ELECTRIC CURRENTS; ELECTRIC FIELD EFFECTS; ELECTRIC POTENTIAL; ELECTRON TUNNELING; HYDROGEN; LOW TEMPERATURE PHENOMENA; SILICON CARBIDE;

SCHOTTKY RECTIFIERS;

ELECTRIC RECTIFIERS;

EID: 0036058391     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (6)

1. Performance and reliability issues of SiC Schottky diodes
2. Temperature dependence of forward and reverse characteristics of Ti, W, Ta and Ni Schottky diodes on 4H-SiC
3. Barrier inhomogeneities and electrical characteristics of Ti/4H-SiC Schottky rectifiers
4. Electron transport of inhomogeneous Schottky barriers: A numerical study
5. Tunneling in thin SOI high voltage devices