Silicon-germanium power devices at low temperatures for deep-space applications

Proceedings IEEE Lester Eastman Conference on High Performance Devices

Volumn , Issue , 2002, Pages 270-275

  Vijh, A ^a   Kapoor, V J ^a   Patterson, R L ^b  

^a UNIVERSITY OF TOLEDO   (United States)

^b NASA GLENN RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

FIELD EFFECT TRANSISTORS; GERMANIUM; ION IMPLANTATION; LEAKAGE CURRENTS; LOW TEMPERATURE EFFECTS; MOS DEVICES; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION;

POWER DISSIPATION;

SILICON;

EID: 0242334044     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (7)

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