Simulation of Si power MOSFET under cryogenic conditions

Solid-State Electronics

Volumn 43, Issue 4, 1999, Pages 771-777

  Mauriello, R J ^a   Sundaram, K B ^a   Chow, L C ^b  

^a University of Central Florida   (United States)

^b UNIVERSITY OF CENTRAL FLORIDA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER MOBILITY; COMPUTER SIMULATION; CRYOGENICS; ELECTRIC BREAKDOWN; ELECTRIC RESISTANCE; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE MODELS; THRESHOLD VOLTAGE; TRANSCONDUCTANCE;

PARAMETER EXTRACTION; SILICON POWER MOSFET;

MOSFET DEVICES;

EID: 0032632397     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(98)00330-X     Document Type: Article

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