Effects of introduction of argon on structural and transparent conducting properties of ZnO-In2O3 thin films prepared by pulsed laser deposition

Thin Solid Films

Volumn 486, Issue 1-2, 2005, Pages 53-57

  Moriga, Toshihiro ^a   Mikawa, Michio ^b   Sakakibara, Yuji ^a   Misaki, Yukinori ^b   Murai, Kei Ichiro ^a   Nakabayashi, Ichiro ^a   Tominaga, Kikuo ^a   B Metson, James ^c  

^a UNIVERSITY OF TOKUSHIMA   (Japan)

^b NATIONAL INSTITUTE OF TECHNOLOGY   (Japan)

^c UNIVERSITY OF AUCKLAND   (New Zealand)

Author keywords

Amorphous materials; Indium oxide; Laser ablation; Zinc oxide

Indexed keywords

AMORPHOUS FILMS; CARRIER CONCENTRATION; CONDUCTIVE MATERIALS; ELECTRIC CONDUCTIVITY; GLASS; HALL EFFECT; INDIUM COMPOUNDS; MAGNETRON SPUTTERING; PARTICLE SIZE ANALYSIS; PHASE DIAGRAMS; PULSED LASER DEPOSITION; SURFACE ROUGHNESS; TEXTURES; THIN FILMS; TRANSPARENCY; ZINC OXIDE;

AMORPHOUS PHASES; HALL MOBILITY; SURFACE TEXTURE; TRANSPARENT CONDUCTIVITY;

ARGON;

EID: 21844431874     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2004.11.241     Document Type: Conference Paper

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