Mobility evaluation in high-k devices

IEEE International Integrated Reliability Workshop Final Report

Volumn , Issue , 2004, Pages 141-144

  Bersuker, G ^a   Zeitzoff, P ^a   Sim, J H ^a,c   Lee, B H ^b   Choi, R ^a   Brown, G ^a   Young, C D ^a  

^a SEMATECH   (United States)

^b IBM   (United States)

^c UNIVERSITY OF TEXAS AT AUSTIN   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

APPROXIMATION THEORY; CAPACITANCE; CARRIER MOBILITY; ELECTRIC CURRENTS; ITERATIVE METHODS; STRESSES; THRESHOLD VOLTAGE; TRANSCONDUCTANCE; TRANSISTORS; VOLTAGE CONTROL;

CHARGE TRAPPING; DRAIN CURRENT; FAST ELECTRON TRAPPING; HIGH-K GATE DIELECTRICS;

DIELECTRIC DEVICES;

EID: 21644463193     PISSN: 19308841     EISSN: 23748036     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (8)

1. MRS Bulletin, Ed. R. M. Wallace and G. Wilks, March 2002
2. G. Bersuker, P. Zeitzoff, G. Brown, and H. R. Huff, "Dielectrics for future transistors," Materials Today, pp. 26-33, January 2004
3. G. Bersuker, J. H. Sim, C. D. Young, R. Choi, B. H. Lee, P. Lysaght, G. A. Brown, P. M. Zeitzoff, M. Gardner, R. W. Murto and H. R. Huff, Mat. Res. Soc. Symp. Proc., Vol. 811, 31, 2004.
4. Wenjuan Zhu, Jin-Ping Han, and T.P. Ma, "Mobility Measurements and Degradation Mechanisms of MOSFETs Made With Ultrathin High-k Dielectrics," IEEE-Trans. El. Dev.,v. 51, pp. 98-105, 2004.
5. A. Kerber, E. Cartier, L. A. Ragnarsson, M. Rosmeulen, L. Pantisano, R. Degraeve, T. Kauerauf, Y. Kim, and G. Groeseneken, "Direct Measurement of the Inversion Charge in MOSFETs: Application to Mobility Extraction in Alternative Gate Dielectrics," VLSI Technology Symposium Digest, pp.159-160, Kyoto, 2003.
6. Chadwin D. Young, Gennadi Bersuker, George A. Brown, Patrick Lysaght, Peter Zeitzoff, Robert W. Murto, and Howard R. Huff, "Charge Trapping and Device Performance Degradation in MOCVD Hafnium-based Gate Dielectric Stack Structures", IEEE-IRPS proceeding, pp.597-598, 2004
7. J. H. Sim, B. H. Lee, R. Choi, K. Matthews, D.L. Kwong, P. Tsui, and G. Bersuker "Hot Carrier Reliability of HfSiON NMOSFETs with Poly and TiN metal gate", DRC, pp.99-100, 2004
8. R. Chau, S. Datta, M. Doczy, B. Doyle, J. Kavalieros, and M. Metz, "High-k/metal-gate stack and its MOSFET characteristics," EDL, v. 25, pp.408-410, 2004