Double-resurf 700 V N-channel LDMOS with best-in-class on-resistance

IEEE International Symposium on Power Semiconductor Devices and ICs (ISPSD)

Volumn , Issue , 2002, Pages 137-140

  Hossain, Zia ^a   Imam, Mohamed ^a   Fulton, Joe ^a   Tanaka, Masami ^a  

^a ON SEMICONDUCTOR   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC BREAKDOWN; ELECTRIC RESISTANCE; INTEGRATED CIRCUIT LAYOUT; OPTIMIZATION; TRANSISTORS;

HIGH VOLTAGE INTEGRATED CIRCUIT (HVIC) CHIPS;

MOS DEVICES;

EID: 0036049982     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (5)

1. HV thin-layer devices (Resurf devices)
2. Thin-layer HV-devices
3. HV high-current lateral devices
4. A review of RESURF technology