Study of the CdTe/As/Si(111) interface by scanning tunneling microscopy and X-ray photoelectron spectroscopy

Surface Science

Volumn 454, Issue 1, 2000, Pages 818-822

  Wiame, F ^a   Rujirawat, S ^b   Brill, G ^b   Xin, Yan ^b   Caudano, R ^a   Sivananthan, S ^b   Browning, N D ^b   Sporken, R ^a,b  

^a UNIVERSITY OF NAMUR   (Belgium)

^b UNIVERSITY OF ILLINOIS AT CHICAGO   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; ARSENIC; DESORPTION; FILM GROWTH; MOLECULAR BEAM EPITAXY; MONOLAYERS; MORPHOLOGY; SCANNING TUNNELING MICROSCOPY; SEMICONDUCTING CADMIUM TELLURIDE; SEMICONDUCTING SILICON; SURFACE ROUGHNESS; X RAY PHOTOELECTRON SPECTROSCOPY;

ARSENIC-TERMINATED SILICON;

INTERFACES (MATERIALS);

EID: 0033689016     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0039-6028(00)00078-9     Document Type: Article

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