First principles calculation of the structure and energy of Si(113)

Physical Review Letters

Volumn 69, Issue 26, 1992, Pages 3785-3788

  Bird, D M ^a,b,c,d,e   Clarke, L J ^a,b,c,d,e   King Smith, R D ^a,b,c,d,e   Payne, M C ^a,b,c,d,e   Stich, I ^a,b,c,d,e   Sutton, A P ^a,b,c,d,e  

^a UNIVERSITY OF BATH   (United Kingdom)

^b UNIVERSITY OF EDINBURGH   (United Kingdom)

^c RUTGERS UNIVERSITY   (United States)

^d UNIVERSITY OF CAMBRIDGE   (United Kingdom)

^e UNIVERSITY OF OXFORD   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0002039054     PISSN: 00319007     EISSN: None     Source Type: Journal    
DOI: 10.1103/PhysRevLett.69.3785     Document Type: Article

References (30)

1. Growth of epitaxial silicon layers by vacuum evaporation
2. The silicon {113} surface as a test for surface-energy calculations
3. The role of carbon in the faceting of silicon surfaces on the (111) to (001) azimuth
4. Structure and electronic properties of the Si(113) surface