Temperature distribution in the cells of low-voltage power VDMOS transistor

Microelectronics Journal

Volumn 30, Issue 2, 1999, Pages 109-113

  Pavlovic, Z ^a   Manic, I ^a   Priji, Z ^b   Stojadinovic, N ^b  

^a UNIVERSITY OF PRI TINA   (Serbia)

^b UNIVERSITY OF NI   (Serbia)

Author keywords

Author please provide keywords

Indexed keywords

HEATING; POWER ELECTRONICS; SEMICONDUCTOR DEVICE MODELS; TEMPERATURE DISTRIBUTION; THERMAL EFFECTS;

POWER TRANSISTORS;

MOSFET DEVICES;

EID: 0033077040     PISSN: 00262692     EISSN: None     Source Type: Journal    
DOI: 10.1016/s0026-2692(98)00096-2     Document Type: Article

References (9)

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4. D. Grant, J. Gowar, Power MOSFET - Theory and Applications, Wiley, New York, 1989.
5. Schütz A., Selberherr S., Pötzl H.W. Temperature distribution and power dissipation in MOSFETs. Solid State Electronics. 27:1984;394-395.
6. Sharma D., Ramanathan K. Modification of MOST I-V characteristics by self-heating. Solid State Electronics. 27:1984;989-994.
7. Hu C., Chi H., Patel V.M. Optimum design of power MOSFET's. IEEE Trans. Electron Devices. ED-31:1984;1693-1700.
8. on resistance, Proc. 11th. Yugoslav Conference on Microelectronics (MIEL'83), Ljubljana, 1983, p.273-280.
9. Pavlovic Z., Prijic Z., Ristic S., Stojadinovic N. Temperature dependence of on-resistance in low-voltage power VDMOS transistors. Microelectronics Journal. 24:1993;115-124.