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Volumn 49, Issue 2, 2001, Pages 387-390

Accurate RF large-signal model of LDMOSFETs including self-heating effect

Author keywords

[No Author keywords available]

Indexed keywords

EMPIRICAL CHANNEL CURRENT MODEL; LARGE SIGNAL MODEL; SELF HEATING EFFECT;

EID: 0035249850     PISSN: 00189480     EISSN: None     Source Type: Journal    
DOI: 10.1109/22.903103     Document Type: Article
Times cited : (18)

References (13)
  • 3
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    • An empirical highfrequency large-signal model for high-voltage LDMOS transistors
    • L. Bengtsson, I. Angelov, H. Zirath, and J. Olsson, "An empirical highfrequency large-signal model for high-voltage LDMOS transistors," in Proc. Eu MC, vol. 1, 1998, pp. 733-735.
    • (1998) Proc. Eu MC , vol.1 , pp. 733-735
    • Bengtsson, L.1    Angelov, I.2    Zirath, H.3    Olsson, J.4
  • 5
    • 0030649497 scopus 로고    scopus 로고
    • A newempirical large signal model for silicon RF LDMOSFET
    • Vancouver, BC, Canada
    • M. Miller, T. Dinh, and E. Shumate, "A newempirical large signal model for silicon RF LDMOSFET," in IEEE MTT-S Int. Microwave Symp. Dig., Vancouver, BC, Canada, 1997, pp. 19-22.
    • (1997) IEEE MTT-S Int. Microwave Symp. Dig. , pp. 19-22
    • Miller, M.1    Dinh, T.2    Shumate, E.3
  • 6
    • 0032124057 scopus 로고    scopus 로고
    • Modeling and characterization of an 80-V silicon LDMOSFET for emerging RFIC applications
    • July
    • P. Perugupalli, M. Trivedi, K. Shenai, and S. K. Leong, "Modeling and characterization of an 80-V silicon LDMOSFET for emerging RFIC applications," IEEE Trans. Electron Devices, vol. 45, pp. 1468-1478, July 1998.
    • (1998) IEEE Trans. Electron Devices , vol.45 , pp. 1468-1478
    • Perugupalli, P.1    Trivedi, M.2    Shenai, K.3    Leong, S.K.4
  • 9
    • 84888609137 scopus 로고    scopus 로고
    • An analytical fully-depleted SOI MOSFET model considering the effects of self-heating and source/drain resistance
    • Apr.
    • M.-C. Hu and S.-L. Jang, "An analytical fully-depleted SOI MOSFET model considering the effects of self-heating and source/drain resistance," IEEE Trans. Electron Devices, vol. 45, pp. 797-801, Apr. 1998.
    • (1998) IEEE Trans. Electron Devices , vol.45 , pp. 797-801
    • Hu, M.-C.1    Jang, S.-L.2
  • 10
    • 84888597198 scopus 로고    scopus 로고
    • A robust and physical BSIM3 nonquasi-static transient and AC small-signal model for circuit simulation
    • Apr.
    • M. Chan, K. Y. Hui, C. Hu, and P. K. Ko, "A robust and physical BSIM3 nonquasi-static transient and AC small-signal model for circuit simulation," IEEE Trans. Electron Devices, vol. 45, pp. 834-841, Apr. 1998.
    • (1998) IEEE Trans. Electron Devices , vol.45 , pp. 834-841
    • Chan, M.1    Hui, K.Y.2    Hu, C.3    Ko, P.K.4
  • 11
    • 0032140536 scopus 로고    scopus 로고
    • Extraction of high-frequency equivalent circuit parameters of submicron gate-length MOSFET's
    • Aug.
    • R. Sung, P. Bendix, and M. B. Das, "Extraction of high-frequency equivalent circuit parameters of submicron gate-length MOSFET's," IEEE Trans. Electron Devices, vol. 45, pp. 1769-1775, Aug. 1998.
    • (1998) IEEE Trans. Electron Devices , vol.45 , pp. 1769-1775
    • Sung, R.1    Bendix, P.2    Das, M.B.3
  • 12
    • 0032069642 scopus 로고    scopus 로고
    • Accurate SOI MOSFET characterization at microwave frequencies for device performance optimization and analog modeling
    • May
    • J.-P. Raskin, R. Gillon, J. Chen, D. Vanhoenacker-Janvier, and J.-P. Colinge, "Accurate SOI MOSFET characterization at microwave frequencies for device performance optimization and analog modeling," IEEE Trans. Electron Devices, vol. 45, pp. 1017-1025, May 1998.
    • (1998) IEEE Trans. Electron Devices , vol.45 , pp. 1017-1025
    • Raskin, J.-P.1    Gillon, R.2    Chen, J.3    Vanhoenacker-Janvier, D.4    Colinge, J.-P.5
  • 13
    • 0031210586 scopus 로고    scopus 로고
    • A simple and accurate MESFET channel-current model including bias-dependent dispersion and thermal phenomena
    • Aug.
    • T. M. Roh, Y. Kim, Y. Suh, W. Sang Park, and B. Kim, "A simple and accurate MESFET channel-current model including bias-dependent dispersion and thermal phenomena," IEEE Trans. Microwave Theory Tech., vol. 45, pp. 1252-1255, Aug. 1997.
    • (1997) IEEE Trans. Microwave Theory Tech. , vol.45 , pp. 1252-1255
    • Roh, T.M.1    Kim, Y.2    Suh, Y.3    Sang Park, W.4    Kim, B.5


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.