Recombination, gain, band structure, efficiency, and reliability of 1.5-μm GaInNAsSb/GaAs lasers

Journal of Applied Physics

Volumn 97, Issue 8, 2005, Pages

  Goddard, Lynford L ^a   Bank, Seth R ^a   Wistey, Mark A ^a   Yuen, Homan B ^a   Rao, Zhilong ^a   Harris Jr , James S ^a  

^a STANFORD UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

FOCUSED ION BEAMS (FIB); HIGHLY REFLECTIVE (HR) COATINGS; THRESHOLD DENSITIES; VERTICAL CAVITY SURFACE EMITTING LASERS (VCSEL);

BAND STRUCTURE; CURRENT DENSITY; GALLIUM COMPOUNDS; MOLECULAR BEAM EPITAXY; PROBABILITY; QUANTUM EFFICIENCY; SPONTANEOUS EMISSION; THERMIONIC EMISSION;

SOLID STATE LASERS;

EID: 21444437708     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1873035     Document Type: Article

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