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Volumn 36, Issue 4, 2004, Pages 317-322

Depth profiling of light elements in PAMBE-grown GaN and helium-implanted titanium with heavy ion time-of-flight elastic recoil detection

Author keywords

Depth profiling; GaN; He implanted Ti; HI ERDA; Nanoporous surfaces; Sputtering

Indexed keywords

GALLIUM NITRIDE; HELIUM; ION BEAMS; MOLECULAR BEAM EPITAXY; PLASMA APPLICATIONS; POLYCRYSTALLINE MATERIALS; SEMICONDUCTOR GROWTH; SPUTTERING; THIN FILMS; TITANIUM; TOPOLOGY;

EID: 2142819446     PISSN: 01422421     EISSN: None     Source Type: Journal    
DOI: 10.1002/sia.1691     Document Type: Article
Times cited : (4)

References (26)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.