|
Volumn 13, Issue 12-13, 2001, Pages 1027-1030
|
Nitridation of silicon oxide layers studied with ion beam analysis on the nanometer scale
|
Author keywords
[No Author keywords available]
|
Indexed keywords
COMPOSITION;
HIGH TEMPERATURE PROPERTIES;
NITROGEN;
SCANNING ELECTRON MICROSCOPY;
SILICON WAFERS;
SURFACES;
THICKNESS MEASUREMENT;
ION BEAM ANALYSIS;
NITRIDATION;
SILICON OXIDE;
SURFACE TOPOLOGY;
TIME OF FLIGHT HEAVY ION ELASTIC RECOIL DETECTION ANALYSIS;
SILICON COMPOUNDS;
|
EID: 0035806587
PISSN: 09359648
EISSN: None
Source Type: Journal
DOI: 10.1002/1521-4095(200107)13:12/13<1027::AID-ADMA1027>3.0.CO;2-S Document Type: Article |
Times cited : (6)
|
References (14)
|