Selectable logarithmic/linear response active pixel sensor cell with reduced fixed-pattern-noise based on dynamic threshold MOS operation

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 44, Issue 4 B, 2005, Pages 2347-2350

  Terauchi, Mamoru ^a   Hamasaki, Atsushi ^a   Suketa, Arinori ^a  

^a HIROSHIMA CITY UNIVERSITY   (Japan)

Author keywords

Active pixel sensor; Dynamic threshold MOSFET; Fixed pattern noise; Logarithmic response

Indexed keywords

ACTIVE PIXEL SENSOR; DYNAMIC THRESHOLD MOSFET; FIXED-PATTERN-NOISE; LOGARITHMIC RESPONSE;

CAPACITANCE; CHARGE COUPLED DEVICES; CMOS INTEGRATED CIRCUITS; DOPING (ADDITIVES); ELECTRIC CURRENTS; GATES (TRANSISTOR); MOS CAPACITORS; NOISE ABATEMENT; PHOTODIODES;

MOSFET DEVICES;

EID: 21244505798     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/JJAP.44.2347     Document Type: Conference Paper

References (9)

1. E. R. Fossum: IEEE Trans. Electron Devices 44 (1997) 1689.
2. R. H. Nixon, S. E. Kemeny, B. Pain, C. O. Staller and E. R. Fossum: IEEE J. Solid-State Circuits 31 (1996) 2046.
3. M. Terauchi: Proc. 2003 IEEE Int. SOI Conf. (IEEE, California, 2003) p. 57.
4. M. Terauchi: Proc. 2001 IEEE Int. SOI Conf. (IEEE, Colorado, 2001) p. 53.
5. T. Mizuno, J. Okamura and A. Toriumi: IEEE Trans. Electron Devices 41 (1994) 2216.
6. T. Mizuno: Jpn. J. Appl. Phys. 35 (1996) 842.
7. S. Kavadias, B. Dierickx, D. Scheffer, A. Alaerts, D. Uwaerts and J. Bogaerts: IEEE J. Solid-State Circuits 35 (2000) 1146.
8. M. Loose, K. Meier and J. Schemmel: IEEE J. Solid-State Circuits 36 (2001) 586.
9. G. G. Storm, J. E. D. Hurwitz, D. Renshaw, K. M. Findlatter, R. K. Henderson and M. D. Purcell: Tech. Dig. Int. Solid-State Circuits Conf. 2004 (IEEE, California, 2004) p. 116.