Threshold voltage fluctuation analysis in dynamic threshold MOSFET based on charge-sharing

IEEE International SOI Conference

Volumn , Issue , 2001, Pages 53-54

  Terauchi, M ^a  

^a HIROSHIMA CITY UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

GATES (TRANSISTOR); SILICON ON INSULATOR TECHNOLOGY; THRESHOLD VOLTAGE;

GATE DEPLETION LAYERS;

MOSFET DEVICES;

EID: 0035158801     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (5)