Formation of high-density GaAs hexagonal nano-wire networks by selective MBE growth on pre-patterned (0 0 1) substrates

Physica E: Low-Dimensional Systems and Nanostructures

Volumn 21, Issue 2-4, 2004, Pages 521-526

  Tamai, Isao ^a   Sato, Taketomo ^a   Hasegawa, Hideki ^a  

^a HOKKAIDO UNIVERSITY   (Japan)

Author keywords

AlGaAs; GaAs; Network; Quantum wire; Selective MBE growth

Indexed keywords

ATOMIC FORCE MICROSCOPY; ELECTRON BEAM LITHOGRAPHY; MOLECULAR BEAM EPITAXY; NANOSTRUCTURED MATERIALS; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTOR GROWTH; SEMICONDUCTOR QUANTUM WIRES;

ALGAAS; GAAS; NANOWIRE NETWORKS;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 1642484171     PISSN: 13869477     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physe.2003.11.080     Document Type: Conference Paper

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