Physical characterization of HfC2 deposited on Ge substrates by MOCVD

Materials Research Society Symposium Proceedings

Volumn 811, Issue , 2004, Pages 163-168

  Van Elshocht, S ^a   Brijs, B ^a   Caymax, M ^a   Conard, T ^a   De Gendt, S ^a   Kubicek, S ^a   Meuris, M ^a   Onsia, B ^a   Richard, O ^a   Teerlinck, I ^a   Van Steenbergen, J ^a   Zhao, C ^a   Heyns, M ^a  

^a IMEC   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; DIELECTRIC MATERIALS; ELLIPSOMETRY; EPITAXIAL GROWTH; GERMANIUM; METALLORGANIC CHEMICAL VAPOR DEPOSITION; THIN FILMS; TRANSISTORS; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION; X RAY PHOTOELECTRON SPECTROSCOPY;

AGGRESSIVE SCALING; BULK DENSITY; GATE DIELECTRICS; INTERFACIAL LAYERS;

HAFNIUM COMPOUNDS;

EID: 19944433349     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (4)

1. K. Prabhakaran et T. Ogino, Surf. Sci., 325, 263-271 (1995).
2. S. Van Elshocht, M. Baklanov, B. Brijs, R. Carter, M. Caymax, L. Carbonell, M. Claes, T. Conard, V. Cosnier, L. Daté, S. De Gendt, J, Kluth, D. Pique, O. Richard, D. Vanhaeren, G. Vereecke, T. Witters, C. Zhao, and M. Heyns, J. Elec. Chem. Soc., in press (2004).
3. H. Kim, C.O. Chui, K.C. Saraswat, and P.C. McIntyre, Appl. Phys. Lett., 83, 2647 (2003).
4. S. Van Elshocht, M. Caymax, S. De Gendt, T. Conard, J. Pétry, L. Daté, D. Pique, and M.M. Heyns, J. Electrochem. Soc., 151, F77-F80 (2004).