Review on the production and synthesis of nanosized sno2

Solid State Phenomena

Volumn 106, Issue , 2005, Pages 57-62

  Papargyri, S A ^c   Tsipas, D N ^c   Papargyris, D A ^b   Botis, A I ^a   Papargyris, A D ^a  

^a TECHNOLOGICAL EDUCATIONAL INSTITUTE OF LARISSA   (Greece)

^b UNIVERSITY OF MANCHESTER   (United Kingdom)

^c ARISTOTLE UNIVERSITY OF THESSALONIKI   (Greece)

Author keywords

Nanomaterials; Semiconducting materials; SnO2; Synthesis; Tin dioxide

Indexed keywords

CHEMICAL VAPOR DEPOSITION; FUNCTIONAL MATERIALS; LASER ABLATION; NANOSTRUCTURED MATERIALS; PRECIPITATION (CHEMICAL); SEMICONDUCTOR DEVICES; SOL-GELS; SYNTHESIS (CHEMICAL);

NANOELECTRONIC DEVICES; PHYSICAL AND MECHANICAL PROPERTIES; PRECURSOR OXIDATION; SEMICONDUCTING MATERIALS; SNO2; SOLUTION PRECIPITATION; TRANSPARENT CONDUCTORS; WIDE BAND SEMICONDUCTORS;

TIN DIOXIDE;

EID: 21244439164     PISSN: 10120394     EISSN: 16629779     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/SSP.106.57     Document Type: Conference Paper

References (53)

1. M. Zheng et al: Chem. Mater.Vol 13,11(2001), p. 3859.
2. M.S. Arnold, P. Avouris , Z.W. Pan, Z.L. Wang, J. Phys. Chem. B. (Comm.),107,3, (2003) p.659–663.
3. S. Iijima.: Nature 354 (1991), p. 56.
4. Z.W. Pan, Z.R. Dai and Z.L. Wang. Science 291 (2001), p. 1947
5. Seeger, P.K. Redlich and M. Rühle,: Adv. Mater. 12 (2000), p. 279.
6. D. P. Yu, C. S. Lee, I. Bello, X. S. Sun, Y. H. Tang, G. W. Zhou, Z. G. Bai, Z. Zhang and S. Q. Feng, Solid Sate Commun, 105,6, (1998), p 403–407
7. J.D. Holmes, K.P. Johnston, R.C. Doty and B.A. Korgel :Science, 87 (2000), p.1471.
8. A.M. Morales and C.M. Lieber:Science, 279 (1998), p. 208.
9. O.C. Monteiro and T. Trindade: J. Mater. Sci. Lett. 19 (2000), p. 859
10. M. Nagano: J. Crystal Growth 66 (1984), p.377.
11. V. Demarne and A. Grisel: Sensors and Actuators, B 15–16 (1993), p.63
12. G. Micocci, A. Serra, P. Siciliano, A. Tepore and Z. Ali-Adib,: Vacuum 47 (1996), p.1175
13. T.W. Capehart and S.C. Chang: J. Vac. Sci. Technol. 18 (1981), p. 393
14. L. Bruno, C. Pijolat and R. Lalauze: Sensors and Actuators, B 18–19 (1994), p.195
15. Y. Liu, W. Zhu, O.K. Tan, X. Yao and Y. Shen: J.Mater. Sci:Mater.Electron.7 (1996), p.279
16. F. Li , J. Xu, X. Yu, L. Chen, J. Zhu, Z. Yang and X. Xin,: Sensors and Actuators B: Chemical, 81, 2–3,(2002)p165–169
17. S.H. Park, Y.C. Son, W.S. Willis, S.L. Suib and K.E.Creasy:Chem. Mater. 10 (1998), p 2389
18. T. Minami, H. Nanto and S. Takata: Jpn. J. Appl. Phys. 27 (1988), p.L287
19. Z.R. Dai, J.L. Gole, J.D. Stout, Z.L. Wang,:,J. Phys. Chem. B 106 (2002), p. 1274
20. X. S. Peng, L. D. Zhang, G. W. Meng, Y. T. Tian, Y. Lin, B. Y. Geng, and S. H. Sun, J. Appl. Phys. 93 (2003), p. 1760–1763
21. J.K. Jian, X.L. Chen, W.J. Wang, L. Dai and Y.P. Xu: Appl. Phys. A 76 (2003), p.291
22. S.H. Sun, G W Meng, M G Zhang, X H An, G S Wu and L D Zhang, J.Phys.D: Appl. Phys. 37 (2004) p.409–412
23. S.H. Sun, G.W.Meng, Y.W. Wang , T.Gao , M.G.Zhang, Y.T.Tian , X.S.Peng X S and L.D. Zhang L D, Applied Physics A: Materials Science & Processing (2003), 76(2), 287–289
24. E. Comini, G. Faglia, G. Sberveglieri, Zhengwei Pan, and Zhong L. Wang, Appl. Phys. Lett. 81 (2002), p.1869–1871
25. Y.Q. Chen, X.F. Cui, K. Zhang, D.Pan, S. Zhang, B. Wang and J. G. Hou, Chem. Physics Lett. Vol.369, 1–2, (2003) p.16–20
26. J. X. Wang et al: Solid State Comm., 130,1–2 (2004), p 89
27. T. W. Kim, D. U. Lee, J. H. Lee, D. C. Choo, and M. Jung: J. Appl. Phys. 90 (2001), p.175
28. S. Gupta, R. K. Roy, M.P.M. Pal Chowdhury and A. K. Pal, Vacuum, 75, 2 (2004) p.111
29. C. Nayral, E. Viala, V. Collière, P. Fau, F. Senocq, A. Maisonnat and B. Chaudret, Appl.Surface Sci, Vol.164, 1–4, (2000) p.219–226.
30. Y Liu, C.Zheng, W. Wang, Y. Zhan and G. Wang: J. Crystal Growth, 233, 1–2 (2001), p. 8
31. Y.K. Liu, C.L. Zheng, W.Z.Wang, C.R. Yin, G.H Wang: Adv. Mater. 13 (2001), p.1883.
32. C. Guo, , M. Cao and C. Hu,, Inor. Chem. Communications. 7, 7 (2004), p 929
33. C. Xu, X. Zhaob, S. Liu & G. Wang, Solid State Comm.,125, 6 (2003) p.301.
34. D. S. Torkhov, A. A. Burukhin, B. R. Churagulov, M. N. Rumyantseva, and V. D. Maksimov, Inorganic Materials, 39,11 (2003), p.1158–1162
35. J. Zhu, Z. Lu, S. T. Aruna, D. Aurbach, and A. Gedanken, Chem. Mater, 12 (9), (2000) p. 2557
36. Q. Pan, X. Dong, J. Zhang and L. He, Wuji Cailiao Xuebao 12 (1997), p 494]
37. N. Yamazoe,:Sensors and Actuators, B 5 (1991), p.7
38. C. Xu, J. Tamaki, N. Miura and N. Yamazoe: Sensors and Actuators, B3 (1991), p. 147
39. M. Ocana, C.J. Serna and E. Matijevic: Colloid Polym. Sci. 273 (1995), p.681
40. A. Diéguez, A. Romano-Rodriguez, J.R. Morante, U. Weimar, M. Schweizer-Berberich, W. Göpel, Solid State Phenomena, 51–52, (1996), p 441–448
41. S.S. Park and J.D. Mackenzie: Thin Solid Films 274 (1996), p.154.
42. M.I. Ivanovskaya et al:Thin Solid Films 296 (1997), p.41.
43. S.G. Ansari et al :Thin Solid Films 295 (1997), p. 271.
44. F. Gu, S.F. Wang, C.F. Song, M.K. Lu, Y.X. Qi, G.J. Zhou, D. Xu and D.R. Yuan: Chem. Phys. Lett. 372 (2003), p.451
45. K.C. Song and J.H. Kim: J. Colloid Interface Sci. 212 (1999), p.193
46. A. Dieguez et al: Sens. Actuators B 60 (1999), p.125
47. T.Wang, Z. Ma, F. Xu and Z. Jiang: Electrochem. Comm., 5,7, (2003) p.599–602
48. F. Gu , S.F. Wang, M.K. Lu, Y.X. Qi, G.J. Zhpu, D. Xu and D.R. Yuan, J.Crystal Growth, 255,3–4, (2003), p.357.
49. H. Yang, W. Jin, L. Wang: Mat.Letters, 57, 22–23, (2003) p.3686
50. E.R. Leite, , M. I.B. Bernardia, E.Longo, J.A. Varela and Carlos A. Paskocimas, Thin Solid Films, 449, 1–2 (2004) p.67
51. S.R. Davis, A.V. Chadwick and J.D. Wright.: J. Mater. Chem. 8 9 (1998) p. 2065–2071
52. C.C. Liu, 2nd Int. Symposium. on Electrochemical Microsystem Technologies, Tokyo, (1998), p. 32.
53. P.T. Moseley et al, Tech. and Mechanisms in Gas Sensing, Adam Hilger, Bristol, UK (1991)