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Volumn 5567, Issue PART 1, 2004, Pages 614-625

OPC model calibration for CPL patterning at extreme low K 1

Author keywords

CD; CPL; Customized illumination; DDL; Eigen Decomposition Model; Low k 1; Model OPC; Real pupil; Vector high NA

Indexed keywords

CHROMELESS PHASE LITHOGRAPHY (CPL); CRITICAL DIMENSIONS (CD); CUSTOMIZED ILLUMINATION; DOUBLE DIPOLE LITHOGRAPHY (DDL); EIGEN DECOMPOSITION MODEL (EDM); LOW K1; MODEL OPC; OPTICAL PROXIMITY CORRECTION (OPC); REAL PUPIL; VECTOR HIGH NA;

EID: 21144460468     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.569655     Document Type: Conference Paper
Times cited : (6)

References (19)
  • 1
    • 19844375218 scopus 로고    scopus 로고
    • US Patent No. 5,242,770
    • US Patent No. 5,242,770.
  • 2
    • 19844369434 scopus 로고    scopus 로고
    • Automatic OPC rule generation, ASML, MaskTools, patent pending
    • Automatic OPC rule generation, ASML, MaskTools, patent pending.
  • 14
    • 0035758727 scopus 로고    scopus 로고
    • Tom V. Pistor, SPIE, Vol. 4346, (2001), 1484.
    • (2001) SPIE , vol.4346 , pp. 1484
    • Pistor, T.V.1
  • 15
    • 0141833847 scopus 로고    scopus 로고
    • Michael S. Yeung, SPIE, Vol. 5040, (2003), 69.
    • (2003) SPIE , vol.5040 , pp. 69
    • Yeung, M.S.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.