Complete scaling analysis of the metal-insulator transition in Ge:Ga: Effects of doping-compensation and magnetic field

Journal of the Physical Society of Japan

Volumn 73, Issue 1, 2004, Pages 173-183

  Itoh, Kohei M ^a   Watanabe, Michio ^b   Ootuka, Youiti ^c   Haller, Eugene E ^d   Ohtsuki, Tomi ^e  

^a KEIO UNIVERSITY   (Japan)

^b RIKEN   (Japan)

^c UNIVERSITY OF TSUKUBA   (Japan)

^d LAWRENCE BERKELEY NATIONAL LABORATORY   (United States)

^e SOPHIA UNIVERSITY   (Japan)

Author keywords

Doped semiconductor; Hopping conduction; Metal insulator transition; Mott Anderson transition; Scaling theory

Indexed keywords

EID: 21144457622     PISSN: 00319015     EISSN: None     Source Type: Journal    
DOI: 10.1143/JPSJ.73.173     Document Type: Article

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