Comparison of the effects of the doping-compensation and magnetic-field on the metal-insulator transition of Ge:Ga

Journal of the Physical Society of Japan

Volumn 72, Issue SUPPL. A, 2003, Pages 181-182

  Itoh, Kohei M ^a   Watanabe, Michio ^b   Ootuka, Youiti ^c   Haller, Eugene E ^d  

^a KEIO UNIVERSITY   (Japan)

^b RIKEN   (Japan)

^c UNIVERSITY OF TSUKUBA   (Japan)

^d LAWRENCE BERKELEY NATIONAL LABORATORY   (United States)

Author keywords

Compensation; Critical exponent; Doped semiconductor; Magnetic field; Metal insulator transition

Indexed keywords

EID: 24044527651     PISSN: 00319015     EISSN: 13474073     Source Type: Journal    
DOI: 10.1143/jpsjs.72sa.181     Document Type: Conference Paper

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