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Volumn 58, Issue 15, 1998, Pages 9851-9857

Electrical properties of isotopically enriched neutron-transmutation-doped near the metal-insulator transition

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EID: 0001670680     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.58.9851     Document Type: Article
Times cited : (39)

References (54)
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    • Hikami, S.1
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    • Hornung, M.1    v. Löhneysen, H.2
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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.