Reliable Tantalum Gate Fully-Depleted-SO1MOSFET’s with 0.15pm Gate Length by Low-Temperature Processing below 500°C

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 1996, Pages 117-120

  Ushikil, Takeo ^a   Yu, Mo Chiun ^a   Hirano, Yuichi ^a   Shimada, Hisayuki ^a   Morita, Mizuho ^a   Ohmi, Tadahiro ^a  

^a TOHOKU UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

MOSFET DEVICES; SILICON ON INSULATOR TECHNOLOGY; TANTALUM; CRYSTALLIZATION; GATES (TRANSISTOR); LEAKAGE CURRENTS; LOW TEMPERATURE OPERATIONS; OXIDATION; OXIDES; PRODUCT DESIGN; RELIABILITY; SEMICONDUCTOR DEVICE MANUFACTURE; SPUTTER DEPOSITION;

DEVICE TECHNOLOGIES; FULLY DEPLETED; FULLY DEPLETED SILICON-ON-INSULATOR; GATE DEVICES; GATE OXIDE; GATE-LENGTH; LOW TEMPERATURE PROCESSING; OXIDE FORMATION; PROCESS STEPS; SILICON-ON-INSULATOR MOSFETS;

TEMPERATURE; MOSFET DEVICES;

FULLY DEPLETED SILICON ON INSULATOR; GATE OXIDE; INTERFACE TRAP DENSITY;

EID: 0030402063     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IEDM.1996.553135     Document Type: Conference Paper

References (11)

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