Auger electron spectroscopy and x-ray photoelectron spectroscopy analysis of angle of incidence effects of ion beam nitridation of GaAs

Journal of Materials Research

Volumn 13, Issue 7, 1998, Pages 1799-1807

  Pan, J S ^a   Huan, C H A ^a   Wee, A T S ^a   Tan, H S ^a   Tan, K L ^a  

^a NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

AUGER ELECTRON SPECTROSCOPY; CHEMICAL BONDS; ION BEAMS; ION BOMBARDMENT; NITRIDING; SEMICONDUCTOR GROWTH; SPUTTERING; X RAY PHOTOELECTRON SPECTROSCOPY;

ION BEAM NITRIDATION (IBN);

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0032121621     PISSN: 08842914     EISSN: None     Source Type: Journal    
DOI: 10.1557/JMR.1998.0254     Document Type: Article

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