Optimisation of SU-8 processing parameters for deep X-ray lithography

Microsystem Technologies

Volumn 11, Issue 4-5, 2005, Pages 303-310

  Barber, R L ^a   Ghantasala, M K ^a,c   Divan, R ^b   Vora, K D ^a   Harvey, E C ^a   Mancini, D C ^b  

^a SWINBURNE UNIVERSITY OF TECHNOLOGY   (Australia)

^b ARGONNE NATIONAL LABORATORY   (United States)

^c Western Michigan University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ASPECT RATIO; CROSSLINKING; DEPOSITION; DIFFUSION; MICROSTRUCTURE; OPTIMIZATION; PHOTORESISTS; POLYMETHYL METHACRYLATES; RESIDUAL STRESSES; SINGLE CRYSTALS; SOLVENTS; THERMAL EXPANSION;

DEEP X-RAY LITHOGRAPHY (DXRL); RESIST THICKNESS; SOLVENT GRADIENTS; TAGUCHI OPTIMIZATION TECHNIQUES;

X RAY LITHOGRAPHY;

EID: 21044447238     PISSN: 09467076     EISSN: None     Source Type: Journal    
DOI: 10.1007/s00542-004-0442-z     Document Type: Conference Paper

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