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Applied Physics Letters

Volumn 86, Issue 20, 2005, Pages 1-3

Ge-Si system nanoclusters in Si matrix formed by solid-phase epitaxy

(2) Xiao, Qinghua a Tu, Hailing a

a GENERAL RESEARCH INSTITUTE FOR NONFERROUS METALS (China)

Author keywords

[No Author keywords available]

Indexed keywords

BIPOLAR TRANSISTORS; CHEMICAL VAPOR DEPOSITION; GERMANIUM; LATTICE CONSTANTS; MOLECULAR BEAM EPITAXY; SELF ASSEMBLY; SILICON; TRANSMISSION ELECTRON MICROSCOPY;

GE-SI SYSTEM; LATTICE SITES; SILICON MATRIX; SOLID-PHASE EPITAXY;

NANOSTRUCTURED MATERIALS;

EID: 20944448646 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.1929081 Document Type: Article

Times cited : (10)

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