Amorphous carbon film growth on Si: Correlation between stress and generation of defects into the substrate

Applied Physics Letters

Volumn 86, Issue 22, 2005, Pages 1-3

  Brusa, R S ^a   MacChi, C ^a   Mariazzi, S ^a   Karwasz, G P ^a   Laidani, N ^b   Bartali, R ^b   Anderle, M ^b  

^a UNIVERSITY OF TRENTO   (Italy)

^b ITC IRST   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

CARBON; FOURIER TRANSFORM INFRARED SPECTROSCOPY; INTERFACES (MATERIALS); RESIDUAL STRESSES; SILICON; STRESS ANALYSIS; STRESS RELAXATION; SUBSTRATES;

AMORPHOUS CARBON FILMS; DIAMOND-LIKE CARBON (DLC) MATERIALS; SILICON SUBSTRATES; VACANCY-LIKE DEFECTS;

AMORPHOUS MATERIALS;

EID: 20944442965     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1940738     Document Type: Article

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