Influence of deposition parameters on the internal stress in a-C:H films

Surface and Coatings Technology

Volumn 111, Issue 2-3, 1999, Pages 141-147

  Cheng, Yuhang ^a   Wu, Yiping ^a   Chen, Jianguo ^a   Xu, Daqing ^a   Qiao, Xueliang ^a   Xie, Changsheng ^a  

^a HUAZHONG UNIVERSITY OF SCIENCE AND TECHNOLOGY   (China)

Author keywords

a C:H films; Internal stress; PECVD; Positron annihilation spectroscopy; Structure

Indexed keywords

AMORPHOUS FILMS; HYDROGENATION; INFRARED SPECTROSCOPY; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; POSITRON ANNIHILATION SPECTROSCOPY; RESIDUAL STRESSES; SUBSTRATES; ARGON; CARBON; ELECTRON ENERGY LEVELS; HYDROCARBONS;

AMORPHOUS HYDROGENATED CARBON FILMS;

PROTECTIVE COATINGS; AMORPHOUS FILMS;

DEPOSITION; FILM; SPECTROSCOPY; STRESS; STRUCTURE;

POSITRON ANNIHILATION SPECTROSCOPY; SUBSTRATE BENDING METHOD;

EID: 0032654526     PISSN: 02578972     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0257-8972(98)00720-8     Document Type: Article

References (32)