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Volumn 14, Issue 3-7, 2005, Pages 1036-1040
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Stress and interfacial defects induced by amorphous carbon film growth on silicon
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Author keywords
Amorphous hydrogenated carbon; Defect characterization; Mechanical properties; Physical vapour deposition
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Indexed keywords
CARBON;
FILM GROWTH;
HARDNESS;
PHYSICAL VAPOR DEPOSITION;
POSITRON ANNIHILATION SPECTROSCOPY;
SILICON;
SPUTTER DEPOSITION;
STRESS ANALYSIS;
SUBSTRATES;
AMORPHOUS HYDROGENATED CARBON;
DEFECT CHARACTERIZATION;
INTERFACIAL DEFECTS;
POSITRON IMPLANTATION;
AMORPHOUS FILMS;
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EID: 18544367210
PISSN: 09259635
EISSN: None
Source Type: Journal
DOI: 10.1016/j.diamond.2004.10.010 Document Type: Conference Paper |
Times cited : (6)
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References (21)
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