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Volumn 14, Issue 3-7, 2005, Pages 1036-1040

Stress and interfacial defects induced by amorphous carbon film growth on silicon

Author keywords

Amorphous hydrogenated carbon; Defect characterization; Mechanical properties; Physical vapour deposition

Indexed keywords

CARBON; FILM GROWTH; HARDNESS; PHYSICAL VAPOR DEPOSITION; POSITRON ANNIHILATION SPECTROSCOPY; SILICON; SPUTTER DEPOSITION; STRESS ANALYSIS; SUBSTRATES;

EID: 18544367210     PISSN: 09259635     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.diamond.2004.10.010     Document Type: Conference Paper
Times cited : (6)

References (21)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.