NiGe on Ge(001) by reactive deposition epitaxy: An in situ ultrahigh-vacuum transmission-electron microscopy study

Applied Physics Letters

Volumn 86, Issue 20, 2005, Pages 1-3

  Nath, R ^a   Soo, C W ^a   Boothroyd, C B ^a   Yeadon, M ^a   Chi, D Z ^a   Sun, H P ^b   Chen, Y B ^b   Pan, X Q ^b   Foo, Y L ^a  

^a INSTITUTE OF MATERIALS RESEARCH AND ENGINEERING   (Singapore)

^b UNIVERSITY OF MICHIGAN   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON-BEAM EVAPORATORS; GE-ON-INSULATOR (GOI); NIGE ISLANDS; REACTIVE DEPOSITION EPITAXY (RDE);

CARRIER MOBILITY; ELECTRON BEAMS; EPITAXIAL GROWTH; MICROELECTRONICS; MICROSTRUCTURE; SUBSTRATES; TRANSMISSION ELECTRON MICROSCOPY; ULTRAHIGH VACUUM;

NICKEL COMPOUNDS;

EID: 20844448739     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1929100     Document Type: Article

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