Surface preparation of Si(001) substrate using low- pH HF solution

Applied Physics Letters

Volumn 86, Issue 17, 2005, Pages 1-3

  Morita, Yukinori ^a   Nishizawa, Masayasu ^a  

^a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; ATOMIC FORCE MICROSCOPY; CRYSTALLOGRAPHY; DIELECTRIC PROPERTIES; GATES (TRANSISTOR); SCANNING TUNNELING MICROSCOPY; SILICON; SILICON WAFERS; SUBSTRATES; ULTRAHIGH VACUUM;

GATE DIELECTRICS; GATE INSULATORS; HIGH TEMPERATURE ANNEALING; SURFACE PREPARATION;

SURFACE CHEMISTRY;

EID: 20844436436     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1915515     Document Type: Article

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